The Role of Joule Heating and Defect Chemistry in Memristor Modeling.
Conference
·
OSTI ID:1241114
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1241114
- Report Number(s):
- SAND2015-1525C; 567350
- Resource Relation:
- Conference: Proposed for presentation at the American Physical Society - March 2015 Meeting held March 4 - February 4, 2015 in San Antonio , TX.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Memristor Physics Driven by Joule Heating.
The role of materials geometry and process conditions in tantalum oxide memristor performance.
First Principles Defect Chemistry for Modeling Irradiated GaAs and III-V's.
Conference
·
Sat Mar 01 00:00:00 EST 2014
·
OSTI ID:1241114
+1 more
The role of materials geometry and process conditions in tantalum oxide memristor performance.
Conference
·
Thu Aug 01 00:00:00 EDT 2013
·
OSTI ID:1241114
+3 more
First Principles Defect Chemistry for Modeling Irradiated GaAs and III-V's.
Conference
·
Tue Mar 01 00:00:00 EST 2011
·
OSTI ID:1241114