Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

Qiao, Qiao; Zhang, Yuyang; Contreras-Guerrero, Rocio; Droopad, Ravi; Pantelides, Sokrates T.; Pennycook, Stephen J.; Ogut, Serdar; Klie, Robert F.

doi:10.1063/1.4936159

Title: Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO₃-buffered ferroelectric BaTiO₃ film on GaAs

Journal Article · Mon Nov 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4936159· OSTI ID:1597708

^[1]; Zhang, Yuyang ^[2]; Contreras-Guerrero, Rocio ^[3]; Droopad, Ravi ^[3]; Pantelides, Sokrates T. ^[2]; Pennycook, Stephen J. ^[4]; Ogut, Serdar ^[5]; Klie, Robert F. ^[5]

Univ. of Illinois, Chicago, IL (United States); Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Texas State Univ., San Marcos, TX (United States)
National Univ. of Singapore (Singapore)
Univ. of Illinois, Chicago, IL (United States)

The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO₃ thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO₃ grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. Here, we use a combination of aberration-corrected scanning transmission electron microscopy and first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO₃ thin filmgrown on GaAs. Here, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO₃), and propose that the presence of surface charge screening allows the formation of switchable domains.

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Research Organization:: Vanderbilt Univ., Nashville, TN (United States); Univ. of California, Berkeley, CA (United States); Brookhaven National Lab. (BNL), Upton, NY (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-09ER46554; AC02-05CH11231; SC00112704; AC05-00OR22725

OSTI ID:: 1597708

Alternate ID(s):: OSTI ID: 1226397; OSTI ID: 1240594; OSTI ID: 1265974

Report Number(s):: BNL-111795-2016-JA; APPLAB; TRN: US2103176

Journal Information:: Applied Physics Letters, Vol. 107, Issue 20; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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References (34)

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Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers Jia, Shasha; Li, Xiaomin; Li, Guanjie Journal of Materials Science: Materials in Electronics, Vol. 30, Issue 10 https://doi.org/10.1007/s10854-019-01310-3	journal	April 2019
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices Kumah, Divine P.; Ngai, Joseph H.; Kornblum, Lior Advanced Functional Materials https://doi.org/10.1002/adfm.201901597	journal	July 2019
Ultrafast collective oxygen-vacancy flow in Ca-doped BiFeO3 Lim, Ji Soo; Lee, Jin Hong; Park, Heung-Sik NPG Asia Materials, Vol. 10, Issue 9 https://doi.org/10.1038/s41427-018-0087-5	journal	September 2018

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