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Title: Phonovoltaic. II. Tuning band gap to optical phonon in graphite

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1240447
Grant/Contract Number:
AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 12; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Melnick, Corey, and Kaviany, Massoud. Phonovoltaic. II. Tuning band gap to optical phonon in graphite. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.125203.
Melnick, Corey, & Kaviany, Massoud. Phonovoltaic. II. Tuning band gap to optical phonon in graphite. United States. doi:10.1103/PhysRevB.93.125203.
Melnick, Corey, and Kaviany, Massoud. Fri . "Phonovoltaic. II. Tuning band gap to optical phonon in graphite". United States. doi:10.1103/PhysRevB.93.125203.
@article{osti_1240447,
title = {Phonovoltaic. II. Tuning band gap to optical phonon in graphite},
author = {Melnick, Corey and Kaviany, Massoud},
abstractNote = {},
doi = {10.1103/PhysRevB.93.125203},
journal = {Physical Review B},
number = 12,
volume = 93,
place = {United States},
year = {Fri Mar 04 00:00:00 EST 2016},
month = {Fri Mar 04 00:00:00 EST 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.93.125203

Citation Metrics:
Cited by: 4works
Citation information provided by
Web of Science

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  • The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around 20.5 A InAs/24 A GaSb were [J. Applied physics, 96, 2580 (2004)] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. We have used a realistic and reliable 14-band k.p formalism description of the superlattice electronic band structure to calculate the absorption coefficient in such short-period InAs/GaSb type-II superlattices. The parameters for this formalism are known from fitting to independent experiments for the bulk materials. The band-gap energies are obtained without any fitting parameters, andmore » are in good agreement with experimental data.« less
  • We report on the evidenced orbital mediated electron–phonon coupling and band gap tuning in HoFe{sub 1−x}Cr{sub x}O{sub 3} (0 ≤ x ≤ 1) compounds. From the room temperature Raman scattering, it is apparent that the electron-phonon coupling is sensitive to the presence of both the Fe and Cr at the B-site. Essentially, an A{sub g} like local oxygen breathing mode is activated due to the charge transfer between Fe{sup 3+} and Cr{sup 3+} at around 670 cm{sup −1}, this observation is explained on the basis of Franck-Condon mechanism. Optical absorption studies infer that there exists a direct band gap in the HoFe{sub 1−x}Cr{sub x}O{sub 3}more » (0 ≤ x ≤ 1) compounds. Decrease in band gap until x = 0.5 is ascribed to the broadening of the oxygen p-orbitals as a result of the induced spin disorder due to Fe{sup 3+} and Cr{sup 3+} at B-site. In contrast, the increase in band gap above x = 0.5 is explained on the basis of the reduction in the available unoccupied d-orbitals of Fe{sup 3+} at the conduction band. We believe that above results would be helpful for the development of the optoelectronic devices based on the ortho-ferrites.« less
  • This paper demonstrates a way to control spectrum tuning capability in one-dimensional (1D) ternary photonic band gap (PBG) material nano-layered structures electro-optically. It is shown that not only tuning range, but also tuning speed of tunable optical filters based on 1D ternary PBG structures can be controlled Electro-optically. This approach finds application in tuning range enhancement of 1D Ternary PBG structures and compensating temperature sensitive transmission spectrum shift in 1D Ternary PBG structures.
  • We present a real-space formulation for calculating the electronic structure and optical conductivity of random alloys based on Kubo-Greenwood formalism interfaced with augmented space recursion technique formulated with the tight-binding linear muffin-tin orbital basis with the van Leeuwen–Baerends corrected exchange potential. This approach has been used to quantitatively analyze the effect of chemical disorder on the configuration averaged electronic properties and optical response of two-dimensional honeycomb siliphene Si xC 1–x beyond the usual Dirac-cone approximation. We predicted the quantitative effect of disorder on both the electronic structure and optical response over a wide energy range, and the results are discussedmore » in the light of the available experimental and other theoretical data. As a result, our proposed formalism may open up a facile way for planned band-gap engineering in optoelectronic applications.« less