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Programmable electroacoustic filter apparatus and method for its manufacture

Patent ·
OSTI ID:1240426
; ; ; ;
An acoustically coupled frequency selective radio frequency (RF) device is provided. The device includes a piezoelectric substrate overlain by a plurality of electrodes. The device further includes a pair of RF input terminals at least one of which is electrically connected to at least one of the electrodes, and a pair of output RF terminals, at least one of which is electrically connected to at least one other of the electrodes. At least one of the electrodes is electromechanically reconfigurable between a state in which it is closer to a face of the piezoelectric substrate and at least one state in which it is farther from the face of the piezoelectric substrate.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
9,276,557
Application Number:
13/932,859
OSTI ID:
1240426
Country of Publication:
United States
Language:
English

References (15)

Fully integrated switchable filter banks
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conference June 2012
Improvement in temperature characteristics of plate wave resonator using rotated Y-cut LiTaO conference January 2011
Capacitive-piezoelectric AlN resonators with Q conference January 2011
High-Q tunable bandstop filters with adaptable bandwidth and pole allocation conference June 2011
RF MEMS Shunt Capacitive Switches Using AlN Compared to $\hbox{Si}_{3}\hbox{N}_{4}$ Dielectric journal October 2012
Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers journal June 2009
A Three-Pole 1.2–2.6-GHz RF MEMS Tunable Notch Filter With 40-dB Rejection and Bandwidth Control journal August 2012
Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends journal July 2009
Filter technologies for converged RF-frontend architectures: SAW, BAW and beyond
  • Aigner, Robert
  • 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) https://doi.org/10.1109/SMIC.2010.5422990
conference January 2010
High-Frequency Lamb Wave Device Composed of LiNbO 3 Thin Film journal July 2009
Single-chip precision oscillators based on multi-frequency, high-Q aluminum nitride MEMS resonators conference June 2009
Capacitive frequency tuning of ALN micromechanical resonators conference June 2011
MEMS technology for timing and frequency control journal January 2007
Applications of surface acoustic and shallow bulk acoustic wave devices journal January 1989
Electrically tunable and switchable film bulk acousitc resonator conference January 2004

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