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Title: Precision fabrication of large area silicon-based geometrically enhanced x-ray photocathodes using plasma etching

Abstract

Geometrically enhanced photocathodes are currently being developed for use in applications that seek to improve detector efficiency in the visible to X-ray ranges. Various photocathode surface geometries are typically chosen based on the detector operational wavelength region, along with requirements such as spatial resolution, temporal resolution and dynamic range. Recently, a structure has been identified for possible use in the X-ray region. This anisotropic high aspect ratio structure has been produced in silicon using inductively coupled plasma (ICP) etching technology. The process is specifically developed with respect to the pattern density and geometry of the photocathode chip to achieve the desired sidewall profile angle. The tapered sidewall profile angle precision has been demonstrated to be within ± 2.5° for a ~ 12° wall angle, with feature sizes that range between 4-9 μm in diameter and 10-25 μm depth. Here we discuss the device applications, design and present the method used to produce a set of geometrically enhanced high yield X-ray photocathodes in silicon.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Nevada Test Site/National Security Technologies, LLC (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1240346
Report Number(s):
DOE/NV/25946-2500
Journal ID: ISSN 0277-786X
DOE Contract Number:  
AC52-06NA25946
Resource Type:
Conference
Journal Name:
Proceedings of SPIE - The International Society for Optical Engineering
Additional Journal Information:
Journal Volume: 9591; Conference: SPIE Conference , San Diego, CA (United States), 7-15 Aug 2015; Journal ID: ISSN 0277-786X
Publisher:
SPIE
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY

Citation Formats

Koch, Jeffrey A., Grim, Gary P., Opachich, Y. P., Chen, N., Bell, P. M., Bradley, D. K., Feng, J., Gopal, A., Hilsabeck, T. J., Huffman, E., Koch, J. A., Landen, O. L., MacPhee, A. G., Nagel, S. R., and Udin, S. Precision fabrication of large area silicon-based geometrically enhanced x-ray photocathodes using plasma etching. United States: N. p., 2015. Web. doi:10.1117/12.2186622.
Koch, Jeffrey A., Grim, Gary P., Opachich, Y. P., Chen, N., Bell, P. M., Bradley, D. K., Feng, J., Gopal, A., Hilsabeck, T. J., Huffman, E., Koch, J. A., Landen, O. L., MacPhee, A. G., Nagel, S. R., & Udin, S. Precision fabrication of large area silicon-based geometrically enhanced x-ray photocathodes using plasma etching. United States. doi:10.1117/12.2186622.
Koch, Jeffrey A., Grim, Gary P., Opachich, Y. P., Chen, N., Bell, P. M., Bradley, D. K., Feng, J., Gopal, A., Hilsabeck, T. J., Huffman, E., Koch, J. A., Landen, O. L., MacPhee, A. G., Nagel, S. R., and Udin, S. Mon . "Precision fabrication of large area silicon-based geometrically enhanced x-ray photocathodes using plasma etching". United States. doi:10.1117/12.2186622. https://www.osti.gov/servlets/purl/1240346.
@article{osti_1240346,
title = {Precision fabrication of large area silicon-based geometrically enhanced x-ray photocathodes using plasma etching},
author = {Koch, Jeffrey A. and Grim, Gary P. and Opachich, Y. P. and Chen, N. and Bell, P. M. and Bradley, D. K. and Feng, J. and Gopal, A. and Hilsabeck, T. J. and Huffman, E. and Koch, J. A. and Landen, O. L. and MacPhee, A. G. and Nagel, S. R. and Udin, S.},
abstractNote = {Geometrically enhanced photocathodes are currently being developed for use in applications that seek to improve detector efficiency in the visible to X-ray ranges. Various photocathode surface geometries are typically chosen based on the detector operational wavelength region, along with requirements such as spatial resolution, temporal resolution and dynamic range. Recently, a structure has been identified for possible use in the X-ray region. This anisotropic high aspect ratio structure has been produced in silicon using inductively coupled plasma (ICP) etching technology. The process is specifically developed with respect to the pattern density and geometry of the photocathode chip to achieve the desired sidewall profile angle. The tapered sidewall profile angle precision has been demonstrated to be within ± 2.5° for a ~ 12° wall angle, with feature sizes that range between 4-9 μm in diameter and 10-25 μm depth. Here we discuss the device applications, design and present the method used to produce a set of geometrically enhanced high yield X-ray photocathodes in silicon.},
doi = {10.1117/12.2186622},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
issn = {0277-786X},
number = ,
volume = 9591,
place = {United States},
year = {2015},
month = {8}
}

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