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Title: Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1240331
Report Number(s):
SAND2015-1378C
567225
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the APS March Meeting held March 2-6, 2015 in San Antonio, TX.
Country of Publication:
United States
Language:
English

Citation Formats

England, Troy Daniel. Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.. United States: N. p., 2015. Web.
England, Troy Daniel. Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.. United States.
England, Troy Daniel. Sun . "Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.". United States. doi:. https://www.osti.gov/servlets/purl/1240331.
@article{osti_1240331,
title = {Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.},
author = {England, Troy Daniel},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 2015},
month = {Sun Feb 01 00:00:00 EST 2015}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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