Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

Choi, Sukwon; Griffin, Benjamin A.

doi:10.1088/0960-1317/26/2/025009

Title: Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

Journal Article · Wed Jan 06 00:00:00 EST 2016 · Journal of Micromechanics and Microengineering. Structures, Devices and Systems

DOI:https://doi.org/10.1088/0960-1317/26/2/025009· OSTI ID:1239984

Choi, Sukwon ^[1]; Griffin, Benjamin A. ^[2]

The Pennsylvania State Univ., University Park, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Thus, across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1239984

Report Number(s):: SAND-2015-10886J; 617639

Journal Information:: Journal of Micromechanics and Microengineering. Structures, Devices and Systems, Vol. 26, Issue 2; ISSN 0960-1317

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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References (14)

Piezoelectric MEMS sensors: state-of-the-art and perspectives Tadigadapa, S.; Mateti, K. Measurement Science and Technology, Vol. 20, Issue 9 https://doi.org/10.1088/0957-0233/20/9/092001	journal	July 2009
CMOS-compatible AlN piezoelectric micromachined ultrasonic transducers Shelton, Stefon; Chan, Mei-Lin; Park, Hyunkyu 2009 IEEE International Ultrasonics Symposium https://doi.org/10.1109/ULTSYM.2009.5441602	conference	September 2009
An analytical analysis of the sensitivity of circular piezoelectric micromachined ultrasonic transducers to residual stress Sammoura, Firas; Smyth, Katherine; Bathurst, Stephen 2012 IEEE International Ultrasonics Symposium https://doi.org/10.1109/ULTSYM.2012.0144	conference	October 2012
Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices Iborra, E.; Clement, M.; Sangrador, J. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Vol. 51, Issue 3 https://doi.org/10.1109/TUFFC.2004.1320791	journal	March 2004
Stress dependence of reactively sputtered aluminum nitride thin films on sputtering parameters Huffman, G. L.; Fahnline, D. E.; Messier, R. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3 https://doi.org/10.1116/1.575923	journal	May 1989
Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications Iborra, E.; Olivares, J.; Clement, M. Sensors and Actuators A: Physical, Vol. 115, Issue 2-3 https://doi.org/10.1016/j.sna.2004.03.053	journal	September 2004
AlN as an actuation material for MEMS applications Andrei, Alexandru; Krupa, Katarzyna; Jozwik, Michal Sensors and Actuators A: Physical, Vol. 141, Issue 2 https://doi.org/10.1016/j.sna.2007.10.041	journal	February 2008
The Tension of Metallic Films Deposited by Electrolysis Stoney, G. G. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 82, Issue 553 https://doi.org/10.1098/rspa.1909.0021	journal	May 1909
Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors Choi, Sukwon; Heller, Eric; Dorsey, Donald Journal of Applied Physics, Vol. 113, Issue 9 https://doi.org/10.1063/1.4794009	journal	March 2013
Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy Beechem, Thomas; Graham, Samuel; Kearney, Sean P. Review of Scientific Instruments, Vol. 78, Issue 6 https://doi.org/10.1063/1.2738946	journal	June 2007
Phonon deformation potentials of wurtzite AlN Gleize, J.; Renucci, M. A.; Frandon, J. Journal of Applied Physics, Vol. 93, Issue 4 https://doi.org/10.1063/1.1539531	journal	February 2003
Raman spectroscopy of sputtered AlN films: E2(high) biaxial strain dependence Trodahl, H. J.; Martin, F.; Muralt, P. Applied Physics Letters, Vol. 89, Issue 6 https://doi.org/10.1063/1.2335582	journal	August 2006
Defect and stress characterization of AlN films by Raman spectroscopy Lughi, Vanni; Clarke, David R. Applied Physics Letters, Vol. 89, Issue 24 https://doi.org/10.1063/1.2404938	journal	December 2006
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control Kuball, M. Surface and Interface Analysis, Vol. 31, Issue 10 https://doi.org/10.1002/sia.1134	journal	January 2001

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