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Title: Towards High-Fidelity InGaN Interatomic Potentials.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1238561
Report Number(s):
SAND2015-0956C
566921
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 2015 Compound Semiconductor Week the 42nd International Symposium on Compound Semiconductors and the 27th International Conference on Indium Phosphide held June 28 - July 2, 2015 in Santa Barba, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Zhou, Xiaowang, Jones, Reese E., Lee, Stephen R., Koleske, Daniel, Crawford, Mary H., and Lu, Ping. Towards High-Fidelity InGaN Interatomic Potentials.. United States: N. p., 2015. Web.
Zhou, Xiaowang, Jones, Reese E., Lee, Stephen R., Koleske, Daniel, Crawford, Mary H., & Lu, Ping. Towards High-Fidelity InGaN Interatomic Potentials.. United States.
Zhou, Xiaowang, Jones, Reese E., Lee, Stephen R., Koleske, Daniel, Crawford, Mary H., and Lu, Ping. Sun . "Towards High-Fidelity InGaN Interatomic Potentials.". United States. doi:. https://www.osti.gov/servlets/purl/1238561.
@article{osti_1238561,
title = {Towards High-Fidelity InGaN Interatomic Potentials.},
author = {Zhou, Xiaowang and Jones, Reese E. and Lee, Stephen R. and Koleske, Daniel and Crawford, Mary H. and Lu, Ping},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 2015},
month = {Sun Feb 01 00:00:00 EST 2015}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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