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Title: The Effects of Ionizing Radiation on TaOx-based Memristors.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1238219
Report Number(s):
SAND2015-0796C
562648
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Nuclear Space and Radiation Effects Conference (NESREC) 2015 held July 13-17, 2015 in Boston, MA.
Country of Publication:
United States
Language:
English

Citation Formats

Tierney, Brian David, Hjalmarson, Harold Paul, McLain, Michael Lee, and Hughart, David Russell. The Effects of Ionizing Radiation on TaOx-based Memristors.. United States: N. p., 2015. Web.
Tierney, Brian David, Hjalmarson, Harold Paul, McLain, Michael Lee, & Hughart, David Russell. The Effects of Ionizing Radiation on TaOx-based Memristors.. United States.
Tierney, Brian David, Hjalmarson, Harold Paul, McLain, Michael Lee, and Hughart, David Russell. Sun . "The Effects of Ionizing Radiation on TaOx-based Memristors.". United States. doi:. https://www.osti.gov/servlets/purl/1238219.
@article{osti_1238219,
title = {The Effects of Ionizing Radiation on TaOx-based Memristors.},
author = {Tierney, Brian David and Hjalmarson, Harold Paul and McLain, Michael Lee and Hughart, David Russell},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 2015},
month = {Sun Feb 01 00:00:00 EST 2015}
}

Conference:
Other availability
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