Electrostatically defined silicon quantum dots with counted antimony donor implants

Singh, M.; Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Luhman, D. R.; Bielejec, E.; Lilly, M. P.; Carroll, M. S.

doi:10.1063/1.4940421

Title: Electrostatically defined silicon quantum dots with counted antimony donor implants

Journal Article · Tue Feb 09 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4940421· OSTI ID:1237511

Singh, M. ^[1]; Pacheco, J. L. ^[2]; Perry, D. ^[2]; Garratt, E. ^[2]; Ten Eyck, G. ^[2];

^[2]; Wendt, J. R. ^[2]; Manginell, R. P. ^[2]; Dominguez, J. ^[2]; Pluym, T. ^[2]; Luhman, D. R. ^[1]; Bielejec, E. ^[2]; Lilly, M. P. ^[1]; Carroll, M. S. ^[2]

Sandia National Laboratories, Albuquerque, New Mexico 87185, USA, Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175, USA
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

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Sponsoring Organization:: USDOE

OSTI ID:: 1237511

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 108 Journal Issue: 6; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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References (20)

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