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Title: Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1236541
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 7; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Shojaei, B., O'Malley, P. J. J., Shabani, J., Roushan, P., Schultz, B. D., Lutchyn, R. M., Nayak, C., Martinis, J. M., and Palmstrøm, C. J. Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.075302.
Shojaei, B., O'Malley, P. J. J., Shabani, J., Roushan, P., Schultz, B. D., Lutchyn, R. M., Nayak, C., Martinis, J. M., & Palmstrøm, C. J. Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. United States. doi:10.1103/PhysRevB.93.075302.
Shojaei, B., O'Malley, P. J. J., Shabani, J., Roushan, P., Schultz, B. D., Lutchyn, R. M., Nayak, C., Martinis, J. M., and Palmstrøm, C. J. Mon . "Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas". United States. doi:10.1103/PhysRevB.93.075302.
@article{osti_1236541,
title = {Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas},
author = {Shojaei, B. and O'Malley, P. J. J. and Shabani, J. and Roushan, P. and Schultz, B. D. and Lutchyn, R. M. and Nayak, C. and Martinis, J. M. and Palmstrøm, C. J.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.075302},
journal = {Physical Review B},
number = 7,
volume = 93,
place = {United States},
year = {Mon Feb 01 00:00:00 EST 2016},
month = {Mon Feb 01 00:00:00 EST 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.93.075302

Citation Metrics:
Cited by: 5 works
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Works referenced in this record:

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156