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Title: High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

Abstract

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grown on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
  1. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1236408
Alternate Identifier(s):
OSTI ID: 1242969; OSTI ID: 1420607
Grant/Contract Number:
FG02-02ER45994; DEFG02-02ER45994
Resource Type:
Journal Article: Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; molecular beam epitaxy; dielectric oxides; reflection high energy electron diffraction; carrier mobility; epitaxy

Citation Formats

Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., and Stemmer, Susanne. High-mobility BaSnO3 grown by oxide molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4939657.
Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., & Stemmer, Susanne. High-mobility BaSnO3 grown by oxide molecular beam epitaxy. United States. doi:10.1063/1.4939657.
Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., and Stemmer, Susanne. Thu . "High-mobility BaSnO3 grown by oxide molecular beam epitaxy". United States. doi:10.1063/1.4939657.
@article{osti_1236408,
title = {High-mobility BaSnO3 grown by oxide molecular beam epitaxy},
author = {Raghavan, Santosh and Schumann, Timo and Kim, Honggyu and Zhang, Jack Y. and Cain, Tyler A. and Stemmer, Susanne},
abstractNote = {High-mobility perovskite BaSnO3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V-1 s-1 in films grown on PrScO3. Lastly, the results open up a wide range of opportunities for future electronic devices.},
doi = {10.1063/1.4939657},
journal = {APL Materials},
number = 1,
volume = 4,
place = {United States},
year = {Thu Jan 28 00:00:00 EST 2016},
month = {Thu Jan 28 00:00:00 EST 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4939657

Citation Metrics:
Cited by: 33works
Citation information provided by
Web of Science

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  • High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grownmore » on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.« less
  • Cited by 33
  • High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in filmsmore » grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.« less
  • Much enhanced electron mobility of 105 000 cm{sup 2}/V s with a high sheet electron concentration (N{sub s}) of 3.1x10{sup 12} cm{sup -12} was obtained at 77 K in pseudomorphic In{sub 0.74}Ga{sub 0.26}As/In{sub 0.46}Al{sub 0.54}As modulation-doped quantum well (MD-QW) grown on a (411)A InP substrate by molecular-beam epitaxy. This MD-QW has the '(411)A super-flat interfaces' (effectively atomically flat interfaces over a wafer-size area), which leads to significant reduction of interface roughness scattering at low temperatures. The highest electron mobility of the (411)A MD-QW was achieved by using pseudomorphic In{sub 0.46}Al{sub 0.54}As barriers. The electron mobility is 44% higher than thatmore » (73 000 cm{sup 2}/V s at 77 K) of a similar MD-QW structure grown on a conventional (100)InP substrate.« less
  • Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877 × 10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112 × 10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300 K to 77 K. Thismore » study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.« less