Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

doi:10.7567/APEX.8.112702

Title: Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

Journal Article · Fri Oct 30 00:00:00 EDT 2015 · Applied Physics Express

DOI:https://doi.org/10.7567/APEX.8.112702· OSTI ID:1236214

Crawford, Mary H. ^[1]; Allerman, Andrew A. ^[1]; Armstrong, Andrew M. ^[1]; Smith, Michael L. ^[1]; Cross, Karen C. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al_0.32Ga_0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 10⁸ cm^–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm² at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm². Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1236214

Report Number(s):: SAND-2015-9785J; 607740

Journal Information:: Applied Physics Express, Vol. 8, Issue 11; ISSN 1882-0778

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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MOVPE Growth of Smooth and Homogeneous Al _0.8 Ga _0.2 N:Si Superlattices as UVC Laser Cladding Layers Kuhn, Christian; Simoneit, Tino; Martens, Martin physica status solidi (a), Vol. 215, Issue 13 https://doi.org/10.1002/pssa.201800005	journal	April 2018
On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures Tran, Nhung Hong; Le, Binh Huy; Zhao, Songrui Applied Physics Letters, Vol. 110, Issue 3 https://doi.org/10.1063/1.4973999	journal	January 2017
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