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Title: Random Field Driven Spatial Complexity at the Mott Transition in VO 2

Journal Article · · Physical Review Letters

Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI ID:
1235775
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Vol. 116 Journal Issue: 3; ISSN 0031-9007
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 33 works
Citation information provided by
Web of Science

References (46)

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Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxide VO 2 journal September 2009
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Phase behaviour of an ensemble of nonintersecting random fluid films journal January 1988
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Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO 2 journal July 2013
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Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging journal December 2007
Non-hysteretic metal–insulator transition of VO2 films grown by excimer-laser-assisted metal organic deposition process journal January 2011
Spatial complexity due to bulk electronic nematicity in a superconducting underdoped cuprate journal January 2012
Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions journal August 2011
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Precise determination of the bond percolation thresholds and finite-size scaling corrections for the sc, fcc, and bcc lattices journal January 1998
Hysteresis and hierarchies: Dynamics of disorder-driven first-order phase transformations journal May 1993
Studying avalanches in the ground state of the two-dimensional random-field Ising model driven by an external field journal November 2000
Self-avoiding surfaces in the 3d Ising model journal August 1995
Distribution of fractal clusters and scaling in the Ising model journal December 1986
Asymptotic uniqueness of the sliding state for charge-density waves journal February 1992
Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide journal February 2009

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