Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

Chow, Weng W.; Liu, Alan Y.; Gossard, Arthur C.; Bowers, John E.

doi:10.1063/1.4934838

Title: Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

Journal Article · Wed Oct 28 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4934838· OSTI ID:1235538

Chow, Weng W. ^[1]; Liu, Alan Y. ^[2]; Gossard, Arthur C. ^[2]; Bowers, John E. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of California, Santa Barbara, CA (United States)

We present a method to quantify inhomogeneous broadening and nonradiative losses in quantum dot lasers by comparing the gain and spontaneous emission results of a microscopic laser theory with measurements made on 1.3 μm InAs quantum-dot lasers. Calculated spontaneous-emission spectra are first matched to those measured experimentally to determine the inhomogeneous broadening in the experimental samples. This is possible because treatment of carrier scattering at the level of quantum kinetic equations provides the homogeneously broadened spectra without use of free parameters, such as the dephasing rate. Thus we then extract the nonradiative recombination current associated with the quantum-dot active region from a comparison of measured and calculated gain versus current relations.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235538

Report Number(s):: SAND-2016-0273J; APPLAB; 618406

Journal Information:: Applied Physics Letters, Vol. 107, Issue 17; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates Wan, Yating; Li, Qiang; Liu, Alan Y. Applied Physics Letters, Vol. 108, Issue 22 https://doi.org/10.1063/1.4952600	journal	May 2016
Effects of modulation p doping in InAs quantum dot lasers on silicon Zhang, Zeyu; Jung, Daehwan; Norman, Justin C. Applied Physics Letters, Vol. 113, Issue 6 https://doi.org/10.1063/1.5040792	journal	August 2018
Quantum-optical influences in optoelectronics—An introduction Chow, Weng W.; Reitzenstein, Stephan Applied Physics Reviews, Vol. 5, Issue 4 https://doi.org/10.1063/1.5045580	journal	December 2018
On quantum-dot lasing at gain peak with linewidth enhancement factor α _H = 0 Chow, Weng W.; Zhang, Zeyu; Norman, Justin C. APL Photonics, Vol. 5, Issue 2 https://doi.org/10.1063/1.5133075	journal	February 2020
Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width Auth, Dominik; Liu, Songtao; Norman, Justin OSA Publishing https://doi.org/10.25534/tuprints-00009667	text	January 2019

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77 NANOSCIENCE AND NANOTECHNOLOGY
quantum dots
quantum wells
emission spectra
spontaneous emission
carrier density

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