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Title: Self-Regulation of Charged Defect Compensation and Formation Energy Pinning in Semiconductors

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep16977· OSTI ID:1235408

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1235408
Report Number(s):
NREL/JA-5K00-64054
Journal Information:
Scientific Reports, Vol. 5; Related Information: Scientific Reports; ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English

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Cited By (9)

Impact of PbI 2 Passivation and Grain Size Engineering in CH 3 NH 3 PbI 3 Solar Absorbers as Revealed by Carrier‐Resolved Photo‐Hall Technique journal October 2019
Room Temperature Phase Transition in Methylammonium Lead Iodide Perovskite Thin Films Induced by Hydrohalic Acid Additives journal September 2016
Self-compensation in chlorine-doped CdTe journal June 2019
Band gap engineering of Ce-doped anatase TiO 2 through solid solubility mechanisms and new defect equilibria formalism journal January 2020
Interplay between strain, defect charge state, and functionality in complex oxides journal July 2016
Novel doping alternatives for single-layer transition metal dichalcogenides journal November 2017
Free-electron effects on the optical absorption of the hybrid perovskite CH 3 NH 3 PbI 3 from first principles journal July 2019
Interplay between strain, defect charge state, and functionality in complex oxides text January 2016
Novel doping alternatives for single-layer transition metal dichalcogenides text January 2017

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