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Title: Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al 0.7Ga 0.3N

Abstract

The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al 0.7Ga 0.3N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Furthermore, deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, which includes thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al 0.7Ga 0.3N.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1235270
Report Number(s):
SAND2015-4124J
Journal ID: ISSN 0021-8979; 588231
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Armstrong, Andrew, Moseley, Michael William, Allerman, Andrew A., Crawford, Mary H., and Wierer, Jonathan. Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al0.7Ga0.3N. United States: N. p., 2015. Web. doi:10.1063/1.4920926.
Armstrong, Andrew, Moseley, Michael William, Allerman, Andrew A., Crawford, Mary H., & Wierer, Jonathan. Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al0.7Ga0.3N. United States. doi:10.1063/1.4920926.
Armstrong, Andrew, Moseley, Michael William, Allerman, Andrew A., Crawford, Mary H., and Wierer, Jonathan. Mon . "Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al0.7Ga0.3N". United States. doi:10.1063/1.4920926.
@article{osti_1235270,
title = {Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al0.7Ga0.3N},
author = {Armstrong, Andrew and Moseley, Michael William and Allerman, Andrew A. and Crawford, Mary H. and Wierer, Jonathan},
abstractNote = {The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al0.7Ga0.3N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Furthermore, deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, which includes thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al0.7Ga0.3N.},
doi = {10.1063/1.4920926},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 18,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}