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Title: Controlling the metal to semiconductor transition of MoS 2 and WS 2 in solution

Abstract

Lithiation-exfoliation produces single to few-layered MoS 2 and WS 2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. We report the dispersion of chemically exfoliated MoS 2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. Ultimately, this process connects the scalability of chemical exfoliation with the simplicity of solution processing, enabling a facile method for tuning the metal to semiconductor transitions of MoS 2 and WS 2 within a liquid medium.

Authors:
 [1]; ;  [2];  [1];  [3];  [1]; ;  [3];  [4]; ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Northwestern Univ., Evanston, IL (United States)
  3. Univ. of Virginia, Charlottesville, VA (United States)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1235256
Report Number(s):
SAND-2015-0020J
Journal ID: ISSN 0002-7863; 558288
Grant/Contract Number:
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of the American Chemical Society
Additional Journal Information:
Journal Volume: 137; Journal ID: ISSN 0002-7863
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Chou, Stanley Shihyao, Yi-Kai Huang, Kim, Jaemyung, Kaehr, Bryan James, Foley, Brian M., Lu, Ping, Conner Dykstra, Hopkins, Patrick E., Brinker, C. Jeffrey, Jiaxing Huang, and David, Vinayak P.. Controlling the metal to semiconductor transition of MoS2 and WS2 in solution. United States: N. p., 2015. Web. doi:10.1021/ja5107145.
Chou, Stanley Shihyao, Yi-Kai Huang, Kim, Jaemyung, Kaehr, Bryan James, Foley, Brian M., Lu, Ping, Conner Dykstra, Hopkins, Patrick E., Brinker, C. Jeffrey, Jiaxing Huang, & David, Vinayak P.. Controlling the metal to semiconductor transition of MoS2 and WS2 in solution. United States. doi:10.1021/ja5107145.
Chou, Stanley Shihyao, Yi-Kai Huang, Kim, Jaemyung, Kaehr, Bryan James, Foley, Brian M., Lu, Ping, Conner Dykstra, Hopkins, Patrick E., Brinker, C. Jeffrey, Jiaxing Huang, and David, Vinayak P.. Thu . "Controlling the metal to semiconductor transition of MoS2 and WS2 in solution". United States. doi:10.1021/ja5107145. https://www.osti.gov/servlets/purl/1235256.
@article{osti_1235256,
title = {Controlling the metal to semiconductor transition of MoS2 and WS2 in solution},
author = {Chou, Stanley Shihyao and Yi-Kai Huang and Kim, Jaemyung and Kaehr, Bryan James and Foley, Brian M. and Lu, Ping and Conner Dykstra and Hopkins, Patrick E. and Brinker, C. Jeffrey and Jiaxing Huang and David, Vinayak P.},
abstractNote = {Lithiation-exfoliation produces single to few-layered MoS2 and WS2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. We report the dispersion of chemically exfoliated MoS2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. Ultimately, this process connects the scalability of chemical exfoliation with the simplicity of solution processing, enabling a facile method for tuning the metal to semiconductor transitions of MoS2 and WS2 within a liquid medium.},
doi = {10.1021/ja5107145},
journal = {Journal of the American Chemical Society},
number = ,
volume = 137,
place = {United States},
year = {Thu Jan 22 00:00:00 EST 2015},
month = {Thu Jan 22 00:00:00 EST 2015}
}

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