N-doping of organic semiconductors by bis-metallosandwich compounds

Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang Bok; Mohapatra, Swagat K.; Guo, Song

N-doping of organic semiconductors by bis-metallosandwich compounds

Patent · 04 January 2016

OSTI ID:1234678

Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang Bok; Mohapatra, Swagat K.; Guo, Song

The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

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Research Organization:: Georgia Tech Research Corporation, Atlanta, GA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-07ER46467

Assignee:: Georgia Tech Research Corporation (Atlanta, GA)

Patent Number(s):: 9,231,219

Application Number:: 14/126,319

OSTI ID:: 1234678

Country of Publication:: United States

Language:: English

References (20)

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N-doping of organic semiconductors by bis-metallosandwich compounds

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