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Title: N-doping of organic semiconductors by bis-metallosandwich compounds

Abstract

The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

Inventors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1234678
Patent Number(s):
9,231,219
Application Number:
14/126,319
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
DOE Contract Number:  
FG02-07ER46467
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jun 13
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Barlow, Stephen, Qi, Yabing, Kahn, Antoine, Marder, Seth, Kim, Sang Bok, Mohapatra, Swagat K., and Guo, Song. N-doping of organic semiconductors by bis-metallosandwich compounds. United States: N. p., 2016. Web.
Barlow, Stephen, Qi, Yabing, Kahn, Antoine, Marder, Seth, Kim, Sang Bok, Mohapatra, Swagat K., & Guo, Song. N-doping of organic semiconductors by bis-metallosandwich compounds. United States.
Barlow, Stephen, Qi, Yabing, Kahn, Antoine, Marder, Seth, Kim, Sang Bok, Mohapatra, Swagat K., and Guo, Song. Tue . "N-doping of organic semiconductors by bis-metallosandwich compounds". United States. https://www.osti.gov/servlets/purl/1234678.
@article{osti_1234678,
title = {N-doping of organic semiconductors by bis-metallosandwich compounds},
author = {Barlow, Stephen and Qi, Yabing and Kahn, Antoine and Marder, Seth and Kim, Sang Bok and Mohapatra, Swagat K. and Guo, Song},
abstractNote = {The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.},
doi = {},
url = {https://www.osti.gov/biblio/1234678}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {1}
}

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