First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics

Varley, J. B.; Lordi, V.; He, X.; Rockett, A.

doi:10.1063/1.4939656

Title: First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics

Journal Article · Fri Jan 08 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4939656· OSTI ID:1234270

Varley, J. B. ^[1]; Lordi, V. ^[1];

^[2]; Rockett, A. ^[2]

Lawrence Livermore National Laboratory, Livermore, California 94550, USA
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

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OSTI ID:: 1234270

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 119 Journal Issue: 2; ISSN 0021-8979

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Country of Publication:: United States

Language:: English

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