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Title: Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te)

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4938120· OSTI ID:1234056
 [1];  [2];  [3]
  1. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA, Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan, South Korea
  2. Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan, South Korea
  3. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA

Sponsoring Organization:
USDOE
Grant/Contract Number:
FG02-88ER45382
OSTI ID:
1234056
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 107 Journal Issue: 24; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 26 works
Citation information provided by
Web of Science

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Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor journal August 2014
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