Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Univ. of Minnesota, Minneapolis, MN (United States)
SrTiO3 (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. Here, we find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on surface conditions for the film and substrate. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States). Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC05-76RL01830; 10122
- OSTI ID:
- 1229940
- Alternate ID(s):
- OSTI ID: 1229681
- Report Number(s):
- PNNL-SA-111633; APPLAB; 48341; KC0203020
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 13; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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