skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Band alignment of epitaxial SrTiO 3 thin films with (LaAlO 3) 0.3-(Sr 2AlTaO 6) 0.7 (001)

Abstract

SrTiO 3 (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO 3) 0.3-(Sr 2AlTaO 6) 0.7 (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. Here, we find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on surface conditions for the film and substrate. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.

Authors:
 [1];  [2];  [2];  [1]
  1. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
  2. Univ. of Minnesota, Minneapolis, MN (United States)
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1229940
Alternate Identifier(s):
OSTI ID: 1229681
Report Number(s):
PNNL-SA-111633
Journal ID: ISSN 0003-6951; APPLAB; 48341; KC0203020
Grant/Contract Number:  
AC05-76RL01830; 10122
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; epitaxial; Environmental Molecular Sciences Laboratory

Citation Formats

Comes, Ryan B., Xu, Peng, Jalan, Bharat, and Chambers, Scott A.. Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001). United States: N. p., 2015. Web. doi:10.1063/1.4932063.
Comes, Ryan B., Xu, Peng, Jalan, Bharat, & Chambers, Scott A.. Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001). United States. doi:10.1063/1.4932063.
Comes, Ryan B., Xu, Peng, Jalan, Bharat, and Chambers, Scott A.. Mon . "Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)". United States. doi:10.1063/1.4932063. https://www.osti.gov/servlets/purl/1229940.
@article{osti_1229940,
title = {Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)},
author = {Comes, Ryan B. and Xu, Peng and Jalan, Bharat and Chambers, Scott A.},
abstractNote = {SrTiO3 (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. Here, we find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on surface conditions for the film and substrate. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.},
doi = {10.1063/1.4932063},
journal = {Applied Physics Letters},
number = 13,
volume = 107,
place = {United States},
year = {Mon Sep 28 00:00:00 EDT 2015},
month = {Mon Sep 28 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V-1 s-1
journal, April 2010

  • Son, Junwoo; Moetakef, Pouya; Jalan, Bharat
  • Nature Materials, Vol. 9, Issue 6, p. 482-484
  • DOI: 10.1038/nmat2750

Why some interfaces cannot be sharp
journal, January 2006

  • Nakagawa, Naoyuki; Hwang, Harold Y.; Muller, David A.
  • Nature Materials, Vol. 5, Issue 3, p. 204-209
  • DOI: 10.1038/nmat1569