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Title: Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

Abstract

Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL mask blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.

Authors:
 [1];  [1];  [2];  [2];  [2]
  1. Intel Corp., Santa Clara, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Materials Sciences Division
Sponsoring Org.:
USDOE
OSTI Identifier:
1229862
Report Number(s):
LBNL-175875
Journal ID: ISSN 0277-786X; ir:175875
DOE Contract Number:
AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Proceedings of SPIE - The International Society for Optical Engineering; Journal Volume: 9422
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yan, Pei-Yang, Zhang, Guojing, Gullickson, Eric M., Goldberg, Kenneth A., and Benk, Markus P. Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement. United States: N. p., 2015. Web. doi:10.1117/12.2087041.
Yan, Pei-Yang, Zhang, Guojing, Gullickson, Eric M., Goldberg, Kenneth A., & Benk, Markus P. Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement. United States. doi:10.1117/12.2087041.
Yan, Pei-Yang, Zhang, Guojing, Gullickson, Eric M., Goldberg, Kenneth A., and Benk, Markus P. Sun . "Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement". United States. doi:10.1117/12.2087041. https://www.osti.gov/servlets/purl/1229862.
@article{osti_1229862,
title = {Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement},
author = {Yan, Pei-Yang and Zhang, Guojing and Gullickson, Eric M. and Goldberg, Kenneth A. and Benk, Markus P.},
abstractNote = {Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL mask blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.},
doi = {10.1117/12.2087041},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
number = ,
volume = 9422,
place = {United States},
year = {Sun Mar 01 00:00:00 EST 2015},
month = {Sun Mar 01 00:00:00 EST 2015}
}