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Title: Resistive switching phenomena: A review of statistical physics approaches

Abstract

Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolationmore » model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.« less

Authors:
 [1];  [2];  [3]
  1. Korea Inst. for Advanced Study, Seoul (South Korea). School of Physics
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Center for Correlated Electron Systems, Seoul (South Korea) ; Seoul National Univ. (Korea, Republic of)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1263835
Alternate Identifier(s):
OSTI ID: 1229652
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Reviews
Additional Journal Information:
Journal Volume: 2; Journal Issue: 3; Journal ID: ISSN 1931-9401
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE

Citation Formats

Lee, Jae Sung, Lee, Shinbuhm, and Noh, Tae Won. Resistive switching phenomena: A review of statistical physics approaches. United States: N. p., 2015. Web. doi:10.1063/1.4929512.
Lee, Jae Sung, Lee, Shinbuhm, & Noh, Tae Won. Resistive switching phenomena: A review of statistical physics approaches. United States. https://doi.org/10.1063/1.4929512
Lee, Jae Sung, Lee, Shinbuhm, and Noh, Tae Won. 2015. "Resistive switching phenomena: A review of statistical physics approaches". United States. https://doi.org/10.1063/1.4929512. https://www.osti.gov/servlets/purl/1263835.
@article{osti_1263835,
title = {Resistive switching phenomena: A review of statistical physics approaches},
author = {Lee, Jae Sung and Lee, Shinbuhm and Noh, Tae Won},
abstractNote = {Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.},
doi = {10.1063/1.4929512},
url = {https://www.osti.gov/biblio/1263835}, journal = {Applied Physics Reviews},
issn = {1931-9401},
number = 3,
volume = 2,
place = {United States},
year = {Mon Aug 31 00:00:00 EDT 2015},
month = {Mon Aug 31 00:00:00 EDT 2015}
}

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Works referenced in this record:

Electrical phenomena in amorphous oxide films
journal, September 1970


Perovskite Oxides as Resistive Switching Memories: A Review
journal, October 2014


Large resistive-switching phenomena observed in Ag/Si 3 N 4 /Al memory cells
journal, April 2010


Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices
journal, October 2011


Phase-change memories
journal, October 2008


Cation-based resistance change memory
journal, February 2013


Nonvolatile Memory Elements Based on Organic Materials
journal, June 2007


Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures
journal, July 2011


Low‐Frequency Negative Resistance in Thin Anodic Oxide Films
journal, September 1962


Bistable Switching in Niobium Oxide Diodes
journal, March 1965


Possible highT c superconductivity in the Ba?La?Cu?O system
journal, June 1986


Electrodynamics of correlated electron materials
journal, June 2011


Cramming More Components Onto Integrated Circuits
journal, January 1998


Moore's law: the future of Si microelectronics
journal, June 2006


Reproducible switching effect in thin oxide films for memory applications
journal, July 2000


Electric-pulse-induced reversible resistance change effect in magnetoresistive films
journal, May 2000


Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
conference, January 2004


Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)
conference, January 2002


A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories
journal, January 2007


Electrical observations of filamentary conductions for the resistive memory switching in NiO films
journal, May 2006


Observation of electric-field induced Ni filament channels in polycrystalline NiOx film
journal, November 2007


Conductivity switching characteristics and reset currents in NiO films
journal, February 2005


Reproducible resistance switching in polycrystalline NiO films
journal, December 2004


Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
journal, April 2009


A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011


Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
journal, May 2009


Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
journal, March 2008


Electrode dependence of resistance switching in polycrystalline NiO films
journal, December 2005


‘Memristive’ switches enable ‘stateful’ logic operations via material implication
journal, April 2010


Direct Identification of the Conducting Channels in a Functioning Memristive Device
journal, June 2010


The missing memristor found
journal, May 2008


Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
journal, October 2009


The mechanism of electroforming of metal oxide memristive switches
journal, May 2009


Memristive switching mechanism for metal/oxide/metal nanodevices
journal, June 2008


Memristive devices for computing
journal, January 2013


A scalable neuristor built with Mott memristors
journal, December 2012


Nanoionics-based resistive switching memories
journal, November 2007


Bistable switching in electroformed metal–insulator–metal devices
journal, July 1988


Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009


Resistive switching in transition metal oxides
journal, June 2008


Resistive non-volatile memory devices (Invited Paper)
journal, July 2009


Adaptive oxide electronics: A review
journal, October 2011


Memory materials: a unifying description
journal, December 2011


Resistive Random Access Memory (ReRAM) Based on Metal Oxides
journal, December 2010


Memory effects in complex materials and nanoscale systems
journal, April 2011


Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
journal, May 2011


Electrochemical metallization memories—fundamentals, applications, prospects
journal, May 2011


Metal–Oxide RRAM
journal, June 2012


Emerging memories: resistive switching mechanisms and current status
journal, June 2012


A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
journal, July 2014


Nanocrystals for silicon-based light-emitting and memory devices
journal, March 2013


Transition metal oxide thin films for nonvolatile resistive random access memory applications
journal, January 2009


Current Status of Nonvolatile Semiconductor Memory Technology
journal, October 2010


Atomic switches: atomic-movement-controlled nanodevices for new types of computing
journal, February 2011


Thermochemical resistive switching: materials, mechanisms, and scaling projections
journal, July 2011


Resistive Switching Phenomena in Complex Oxide Heterostructures
journal, November 2013


Resistive switching memory: observations with scanning probe microscopy
journal, January 2011


Emerging memory technologies: Trends, challenges, and modeling methods
journal, April 2012


Challenges and opportunities for future non-volatile memory technology
journal, March 2011


Resistance switching in oxides with inhomogeneous conductivity
journal, June 2013


Resistive Switching Effect in Titanium Oxides
journal, February 2014


Redox-Based Resistive Switching Memories
journal, October 2012


Nanoscale resistive switching devices: mechanisms and modeling
journal, January 2013


Memristor-The missing circuit element
journal, January 1971


Memristive devices and systems
journal, January 1976


Carbon nanotube composites with high dielectric constant at low percolation threshold
journal, July 2005


Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control
journal, July 2007


Improvement of resistive memory switching in NiO using IrO2
journal, June 2006


Predictability of reset switching voltages in unipolar resistance switching
journal, April 2009


Random Circuit Breaker Network Model for Unipolar Resistance Switching
journal, March 2008


Highly Improved Uniformity in the Resistive Switching Parameters of TiO 2 Thin Films by Inserting Ru Nanodots
journal, February 2013


Improvement of resistive switching memory achieved by using arc-shaped bottom electrode
journal, December 2014


Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode
journal, July 2008


Enhanced endurance reliability and low current operation for AlOx/HfOx based unipolar RRAM with Ni electrode
journal, April 2014


Improvement of resistive switching in NiO-based nanowires by inserting Pt layers
journal, October 2012


Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer
journal, October 2008


Improved Resistive Switching Dispersion of NiO x Thin Film by Cu-Doping Method
journal, May 2010


MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?
journal, March 2008


Universality classes in nonequilibrium lattice systems
journal, August 2004


Percolation models for gate oxide breakdown
journal, November 1999


1/ f noise in random resistor networks: Fractals and percolating systems
journal, April 1985


Measurement of the fourth moment of the current distribution in two-dimensional random resistor networks
journal, April 1989


ac conduction and 1/f noise in a Cr-film lattice-percolation system
journal, July 1992


Electrical breakdown measurements of semicontinuous metal films
journal, August 1992


Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching
journal, January 2011


High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application
journal, November 2007


Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt Stack
journal, January 2007


Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
journal, January 2010


Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films
journal, May 2010


Resistive switching in a Pt/TiO2/Pt thin film stack – a candidate for a non-volatile ReRAM
journal, September 2007


A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO 2 /Pt structure
journal, May 2011


Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO 2 /Pt cell
journal, April 2012


Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors
journal, May 2008


Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
journal, January 2009


Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires
journal, November 2011


Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
journal, June 2012


Dielectric breakdown I: A review of oxide breakdown
journal, October 1996


Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory
journal, September 2007


Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
journal, August 2008


In situ imaging of the conducting filament in a silicon oxide resistive switch
journal, January 2012


Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
journal, June 2011


Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires
journal, August 2011


Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
journal, January 2007


Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films
journal, January 2009


Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film
journal, October 2005


Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
journal, September 2006


Scaling behaviors of reset voltages and currents in unipolar resistance switching
journal, November 2008


Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
journal, February 2009


Direct observation of conducting filaments on resistive switching of NiO thin films
journal, June 2008


Random and localized resistive switching observation in Pt/NiO/Pt
journal, November 2007


Multilevel unipolar resistance switching in TiO2 thin films
journal, August 2009


Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
journal, July 2007


Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
journal, March 2012


Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010


Study on the resistive switching time of TiO2 thin films
journal, July 2006


Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
journal, August 2005


Nanoscale resistive switching in SrTiO3 thin films
journal, March 2007


Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
journal, November 2004


Resistance switching in perovskite thin films
journal, July 2006


Effect of top electrode on resistance switching of (Pr, Ca)MnO3 thin films
journal, December 2006


Interface resistance switching at a few nanometer thick perovskite manganite active layers
journal, June 2006


Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode
journal, December 2008


Nonvolatile resistive switching in metal/La-doped BiFeO 3 /Pt sandwiches
journal, September 2010


Solid-state memories based on ferroelectric tunnel junctions
journal, December 2011


A ferroelectric memristor
journal, September 2012


Ferroelectric Tunnel Memristor
journal, October 2012


Electrical current distribution across a metal–insulator–metal structure during bistable switching
journal, September 2001


Resistance switching in polycrystalline BiFeO3 thin films
journal, July 2010


In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
journal, September 2013


Modeling for bipolar resistive memory switching in transition-metal oxides
journal, October 2010


Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics
journal, May 2011


Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing
journal, February 2010


Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior
journal, September 2011


Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
journal, August 2011


Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
journal, November 2011


Bipolar resistive switching of chromium oxide for resistive random access memory
journal, August 2011


Electrical Performance and Scalability of Pt Dispersed SiO 2 Nanometallic Resistance Switch
journal, June 2013


Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
journal, August 2012


Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
journal, November 2010


A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory
journal, October 2013


Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
journal, December 2008


Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
journal, February 2012


Resistive Switching Behavior and Multiple Transmittance States in Solution-Processed Tungsten Oxide
journal, June 2011


Effect of electrode material on the resistance switching of Cu2O film
journal, December 2007


Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices
journal, February 2013


Oxide Heterostructure Resistive Memory
journal, May 2013


Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application
conference, January 2005


Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
journal, June 2001


Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
journal, March 2006


Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions
journal, March 2010


Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
journal, March 2009


Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
journal, August 2010


Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
conference, December 2008


Study on Thermochromic VO 2 Films Grown on ZnO-Coated Glass Substrates for “Smart Windows”
journal, October 2003


Active Terahertz Nanoantennas Based on VO 2 Phase Transition
journal, June 2010


Memory Metamaterials
journal, August 2009


Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
journal, November 2007


Oxygen vacancies in ZnO
journal, September 2005


Electrical and defect thermodynamic properties of nanocrystalline titanium dioxide
journal, January 1999


HPHA Effect on Reversible Resistive Switching of Pt∕Nb-Doped SrTiO[sub 3] Schottky Junction for Nonvolatile Memory Application
journal, January 2007


Polarity‐dependent memory switching and behavior of Ag dendrite in Ag‐photodoped amorphous As 2 S 3 films
journal, June 1976


Observation of conducting filament growth in nanoscale resistive memories
journal, January 2012


Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3
journal, August 2004


Imaging oxygen defects and their motion at a manganite surface
journal, March 2011


Surface and Defect Structure of Oxide Nanowires on SrTiO 3
journal, August 2011


Oxygen Vacancy: The Invisible Agent on Oxide Surfaces
journal, October 2003


Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on TiO 2 ( 110 )
journal, September 2007


Electrocoloration in SrTi O 3 : Vacancy Drift and Oxidation-Reduction of Transition Metals
journal, November 1971


Electrocoloration and oxygen vacancy mobility of BaTiO3
journal, November 2007


dc Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals
journal, June 1990


Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
journal, September 2011


Electrochemical metallization cells—blending nanoionics into nanoelectronics?
journal, February 2012


Quantized conductance atomic switch
journal, January 2005


Nanobatteries in redox-based resistive switches require extension of memristor theory
journal, April 2013


Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
journal, October 2011


Mechanism for resistive switching in an oxide-based electrochemical metallization memory
journal, February 2012


Low current resistive switching in Cu–SiO2 cells
journal, March 2008


Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
journal, September 2007


On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
journal, December 2008


Time-dependent current-voltage curves during the forming process in unipolar resistance switching
journal, January 2011


Two opposite hysteresis curves in semiconductors with mobile dopants
journal, June 2013


Multiscale simulation on electromigration of the oxygen vacancies in metal oxides
journal, January 2011


Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
journal, September 2011


Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
journal, March 2010


Exponential ionic drift: fast switching and low volatility of thin-film memristors
journal, November 2008


Study of the negative resistance phenomenon in transition metal oxide films from a statistical mechanics point of view
journal, January 2006


The switching location of a bipolar memristor: chemical, thermal and structural mapping
journal, May 2011


Current-controlled negative differential resistance due to Joule heating in TiO 2
journal, November 2011


Molecular dynamics simulations of oxide memristors: thermal effects
journal, February 2011


Molecular dynamics simulations of oxide memristors: Crystal field effects
journal, August 2011


Large 1/f noise of unipolar resistance switching and its percolating nature
journal, September 2009


Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
journal, October 2009


Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
journal, January 2008


Resistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures
journal, January 2006


Effects of Ultraviolet Illumination on Resistive Switching Properties of Cu x O Thin Film
journal, August 2010


Resistive switching characteristics of MnO x -based ReRAM
journal, February 2009


Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
journal, July 2013


Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory
journal, March 2011


Scaling Theory for Unipolar Resistance Switching
journal, November 2010


Resistance switching in the metal deficient-type oxides: NiO and CoO
journal, July 2007


Relations between the concentrations of imperfections in solids
journal, May 1958


Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell
journal, November 2012


The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
journal, March 2009


Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films
journal, January 2015


The Art and Science of Constructing a Memristor Model
book, November 2013


Isothermal Switching and Detailed Filament Evolution in Memristive Systems
journal, April 2014


Phenomenological modeling of memristive devices
journal, January 2015


Low voltage two-state-variable memristor model of vacancy-drift resistive switches
journal, February 2015


A physical model of switching dynamics in tantalum oxide memristive devices
journal, June 2013


Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results
journal, April 2014


A Control Strategy for Parallel Operation of Single-Phase Voltage Source Inverters: Analysis, Design and Experimental Results
journal, June 2013


O-Ti (Oxygen-Titanium)
journal, August 2001


Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM
conference, December 2007


First-principles modeling of resistance switching in perovskite oxide material
journal, July 2006


Mechanism for bipolar switching in a Pt / TiO 2 / Pt resistive switching cell
journal, May 2009


Intrinsic Mechanisms of Memristive Switching
journal, May 2011


Magnetoelectric Devices for Spintronics
journal, July 2014


Ferroelectric tunnel junctions for information storage and processing
journal, July 2014


Lowering the Temperature of Solid Oxide Fuel Cells
journal, November 2011


Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
journal, April 2009


An ionic bottle for high-speed, long-retention memristive devices
journal, February 2011


Atomic-Scale Analysis of the Oxygen Configuration at a SrTiO 3 Dislocation Core
journal, November 2005


Localized Metallic Conductivity and Self-Healing during Thermal Reduction of SrTiO 3
journal, February 2002


Atomic and electronic characterization of the a [ 100 ] dislocation core in SrTiO 3
journal, September 2002


Colossal Ionic Conductivity at Interfaces of Epitaxial ZrO2:Y2O3/SrTiO3 Heterostructures
journal, August 2008


Electrical Modulation of the Local Conduction at Oxide Tubular Interfaces
journal, September 2013


Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density
journal, July 2014


A Review on Conduction Mechanisms in Dielectric Films
journal, January 2014


Physics of Semiconductor Devices
book, January 2007


Bipolar Resistance Switching in Transparent ITO/LaAlO 3 /SrTiO 3 Memristors
journal, May 2014


Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo
journal, February 2010


Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure
journal, February 2013


Resistive switching characteristics and mechanism of thermally grown WO x thin films
journal, September 2011


Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface
journal, June 2008


Field-induced resistive switching based on space-charge-limited current
journal, January 2007


Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr 0.7 Ca 0.3 MnO 3 for Bipolar Resistive Switching
journal, January 2011


Trap-assisted tunneling resistance switching effect in CeO 2 /La 0.7 (Sr 0.1 Ca 0.9 ) 0.3 MnO 3 heterostructure
journal, October 2012


Conduction mechanism of TiN/HfO x /Pt resistive switching memory: A trap-assisted-tunneling model
journal, August 2011


Bipolar resistive switching based on SrTiO 3 /YBa 2 Cu 3 O 7 epi-layers
journal, December 2012


Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
journal, January 2011


Colossal electroresistance of a Pr 0.7 Ca 0.3 Mn O 3 thin film at room temperature
journal, December 2004


Temperature dependence of current-voltage characteristics of Ag–La0.7Ca0.3MnO3–Pt heterostructures
journal, October 2006


Bipolar resistive switching behavior of La 0.5 Sr 0.5 CoO 3−σ films for nonvolatile memory applications
journal, June 2014


Electrically configurable electroforming and bipolar resistive switching in Pt/TiO 2 /Pt structures
journal, July 2010


Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
journal, August 2010


Scaling limits of resistive memories
journal, May 2011


Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
journal, December 2008


Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition
journal, January 2011

  • Kügeler, C.; Zhang, J.; Hoffmann-Eifert, S.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 1
  • https://doi.org/10.1116/1.3536487

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journal, January 2012


A Family of Electronically Reconfigurable Nanodevices
journal, October 2009


Interpretation of set and reset switching in nickel oxide thin films
journal, June 2014


Percolation processes: I. Crystals and mazes
journal, July 1957


Classical Transport in Disordered Media: Scaling and Effective-Medium Theories
journal, December 1971


Breakdown properties of quenched random systems: The random-fuse network
journal, July 1987


Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels
journal, December 2008


Statistical properties of the electrically induced contact resistance between two stainless steel balls
journal, June 2013


Dual random circuit breaker network model with equivalent thermal circuit network
journal, January 2014


A unified model for unipolar resistive random access memory
journal, February 2012


Area and Thickness Scaling of Forming Voltage of Resistive Switching Memories
journal, January 2014


Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma
journal, November 2013


Analysis and modeling of resistive switching statistics
journal, April 2012


Evaluation of the lifetime and failure probability for inter-poly oxides from RVS measurements
journal, October 1994


Low-frequency fluctuations in solids: 1 f noise
journal, July 1981


1 f noise and other slow, nonexponential kinetics in condensed matter
journal, April 1988


Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis
conference, December 2011


Flicker ( 1 f ) Noise in Percolation Networks: A New Hierarchy of Exponents
journal, April 1985


Resistance noise in nonlinear resistor networks
journal, January 1987


Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film
journal, September 2010


Third-harmonic generation in semicontinuous metal films
journal, December 1992


Scaling behaviors for resistive memory switching in NiO nanowire devices
journal, January 2014


Structure and growth mechanism of mineral dendrites
journal, October 1991


Fractal Dimension of Dielectric Breakdown
journal, March 1984


Fractal growth processes
journal, August 1986


Mass transport in chalcogenide electrolyte films – materials and applications
journal, May 2006


Theory of Fractal Growth
journal, August 1988


Simulation of Electric Breakdown and Resulting Variant of Percolation Fractals
journal, March 1985


Diffusion-limited aggregation as branched growth
journal, February 1994


Application of experimental and numerical models to the physics of multiparticle systems
journal, February 1993


Diffusion-Limited Aggregation, a Kinetic Critical Phenomenon
journal, November 1981


Logarithmic voltage anomalies in random resistor networks
journal, September 1987


Threshold Switching and Conductance Quantization in Al/HfO 2 /Si(p) Structures
journal, April 2013


Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films
journal, January 2014


Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt
journal, May 2014


Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model
journal, January 2007


Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films
journal, April 2013


Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO 3 /Pt cells
journal, March 2011


Bipolar and unipolar resistive switching in Zn 0.98 Cu 0.02 O films
journal, August 2011


Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
journal, December 2009


Polarity dependence of forming step on improved performance in Ti/HfOx/W with dual resistive switching mode
journal, December 2013


Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM
journal, January 2013


Coexistence of unipolar and bipolar resistive switching in BiFeO 3 and Bi 0.8 Ca 0.2 FeO 3 films
journal, May 2012


Nonvolatile Memory with Multilevel Switching: A Basic Model
journal, April 2004


Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells
journal, May 2011


Origin of the OFF state variability in ReRAM cells
journal, March 2014


Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO 3 Junction via Current–Voltage and Capacitance–Voltage Measurements
journal, December 2008


Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
journal, March 2014


Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films
journal, January 2010


Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells
journal, January 2011


Physics gets its hands dirty
journal, March 2015


Observation of two resistance switching modes in TiO 2 memristive devices electroformed at low current
journal, May 2011


Device scaling limits of Si MOSFETs and their application dependencies
journal, March 2001


Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
journal, September 2014


Complementary resistive switches for passive nanocrossbar memories
journal, April 2010


Bottom Electrode Modification of ZrO 2 Resistive Switching Memory Device with Au Nanodots
journal, February 2012


Flash Memories
book, January 1999


Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
journal, October 2010


Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
journal, March 2012


Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films
journal, January 2006


High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
journal, January 2012


Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory
journal, July 2014


Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
journal, January 2013


Multilevel Resistive Switching in Planar Graphene/SiO 2 Nanogap Structures
journal, April 2012


Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays
journal, February 2014


Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
journal, March 2011


Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory
journal, November 2012


The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits
journal, February 2005


Nanoelectronics from the bottom up
journal, November 2007


Behavior Characteristics of Nano-Stage According to Hinge Structure
journal, November 2007


Engineering nonlinearity into memristors for passive crossbar applications
journal, March 2012


High-Density Crossbar Arrays Based on a Si Memristive System
journal, February 2009


RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
journal, February 2013


Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
journal, May 2014


Diode-less bilayer oxide (WO x –NbO x ) device for cross-point resistive memory applications
journal, November 2011


Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications
journal, May 2012


Resistive Switches and Memories from Silicon Oxide
journal, October 2010


Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$
journal, May 2008


Spatial Redistribution of Oxygen Ions in Oxide Resistance Switching Device after Forming Process
journal, June 2010


Resistance Switching in Electroformed Pt/FeO x/Pt Structures
journal, October 2007


32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
journal, October 2012


The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
journal, May 2010


Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching
journal, January 2007


Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
journal, October 2007


Theory of Fractal Growth
book, January 1988


Random Circuit Breaker Network Model for Unipolar Resistance Switching
journal, June 2008


Electrochemical metallization memories—fundamentals, applications, prospects
journal, June 2011


Memory effects in complex materials and nanoscale systems
text, January 2010


A ferroelectric memristor
text, January 2012


Two opposite hysteresis curves in semiconductors with mobile dopants
text, January 2012


Works referencing / citing this record:

Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO x based Memristive Devices
journal, July 2017


Low-Temperature-Processed SiO x One Diode-One Resistor Crossbar Array and Its Flexible Memory Application
journal, April 2018


Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO 2 ‐Based Resistive Switching Device
journal, August 2018


Fully Printed Flexible Crossbar Memory Devices with Tip‐Enhanced Micro/Nanostructures
journal, March 2019


Ab initio phase diagrams of Hf–O, Zr–O and Y–O: a comparative study
journal, January 2019


Non-ohmic behavior and resistive switching of Au cluster-assembled films beyond the percolation threshold
journal, January 2019


Superposition of interface and volume type resistive switching in perovskite nanoionic devices
journal, January 2019


Quantum point contacts and resistive switching in Ni/NiO nanowire junctions
journal, November 2016


Real-time observation of filamentary conduction pathways in Ca-doped BiFeO 3
journal, October 2019


Effect of MoS 2 film on memristor characteristics of ZnO film
journal, December 2019


Investigation of resistive switching and transport mechanisms of Al 2 O 3 /TiO 2− x memristors under cryogenic conditions (1.5 K)
journal, February 2020


Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights
journal, October 2019


Resistive switching in reactive electrode-based memristor: engineering bulk defects and interface inhomogeneity through bias characteristics
journal, February 2019


Current-induced magnetization switching using an electrically insulating spin-torque generator
journal, February 2018


Transport, Magnetic, and Memristive Properties of a Nanogranular (CoFeB) x (LiNbO y )100–x Composite Material
journal, March 2018


A Highly Transparent Artificial Photonic Nociceptor
journal, March 2019


Detection of bovine serum albumin using hybrid TiO2 + graphene oxide based Bio – resistive random access memory device
journal, November 2019


Controllable digital resistive switching for artificial synapses and pavlovian learning algorithm
journal, January 2019


Hole-alleviated trap transport in dielectrics
journal, March 2018


Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO 2 multilayers
journal, July 2018


Atomic-Force Microscopy of Resistive Nonstationary Signal Switching in ZrO2(Y) Films
journal, November 2019


Large-area plastic nanogap electronics enabled by adhesion lithography
journal, June 2018


Electrically controlled water permeation through graphene oxide membranes
journal, July 2018


Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities
journal, January 2020


Memristive Properties of Structures Based on (Co41Fe39B20) x (LiNbO3)100–x Nanocomposites
journal, May 2018


Interface-type resistive switching in perovskite materials
journal, May 2017


A Collective Study on Modeling and Simulation of Resistive Random Access Memory
journal, January 2018


A Precise Algorithm of Memristor Switching to a State with Preset Resistance
journal, May 2018


Towards In-Situ Electron Microscopy Studies of Flash Sintering
journal, July 2019


An efficient Verilog-A memristor model implementation: simulation and application
journal, June 2019


Remote control of resistive switching in TiO2 based resistive random access memory device
journal, December 2017


Memristor effect in GeO[SiO 2 ] and GeO[SiO] solid alloys films
journal, June 2019


Characterization of oxygen vacancies in SrTiO 3 by means of anelastic and Raman spectroscopy
journal, October 2019


Electric-field-induced insulator to Coulomb glass transition via oxygen-vacancy migration in Ca-doped BiFe O 3
journal, July 2016


Remote control of resistive switching in TiO2 based resistive random access memory device
journal, December 2017


Detection of bovine serum albumin using hybrid TiO2 + graphene oxide based Bio – resistive random access memory device
journal, November 2019


A Collective Study on Modeling and Simulation of Resistive Random Access Memory
journal, January 2018