Pressure-induced changes in the electron density distribution in α-Ge near the α-β transition

Li, Rui; Liu, Jing; Bai, Ligang; Tse, John S.; Shen, Guoyin

doi:10.1063/1.4929368

Title: Pressure-induced changes in the electron density distribution in α-Ge near the α-β transition

Journal Article · Wed Aug 19 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4929368· OSTI ID:1229624

^[1]; Liu, Jing ^[2]; Bai, Ligang ^[3]; Tse, John S. ^[4]; Shen, Guoyin ^[3]

Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China, HPCAT Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439, USA, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
HPCAT Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439, USA
Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-99ER45775; DE-NA0001974; AC02-06CH11357; NA0001974

OSTI ID:: 1229624

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 107 Journal Issue: 7; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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References (35)

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