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Title: Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Authors:
ORCiD logo [1];  [2];  [3];  [4]
  1. Department of Micro- and Nanoelectronic Systems, Institute of Micro and Nanoelectronics, Faculty of Electrical Engineering and Information Technology, Ilmenau University of Technology, Gustav-Kirchhoff-Straße 1, Ilmenau 98693, Germany, Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
  2. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
  3. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA, Oxford Instruments, 300 Baker Avenue, Suite 150, Concord, Massachusetts 01742, USA
  4. Department of Micro- and Nanoelectronic Systems, Institute of Micro and Nanoelectronics, Faculty of Electrical Engineering and Information Technology, Ilmenau University of Technology, Gustav-Kirchhoff-Straße 1, Ilmenau 98693, Germany
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1229572
Grant/Contract Number:  
AC02- 05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Ishchuk, Valentyn, Olynick, Deirdre L., Liu, Zuwei, and Rangelow, Ivo W. Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma. United States: N. p., 2015. Web. doi:10.1063/1.4927731.
Ishchuk, Valentyn, Olynick, Deirdre L., Liu, Zuwei, & Rangelow, Ivo W. Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma. United States. doi:10.1063/1.4927731.
Ishchuk, Valentyn, Olynick, Deirdre L., Liu, Zuwei, and Rangelow, Ivo W. Wed . "Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma". United States. doi:10.1063/1.4927731.
@article{osti_1229572,
title = {Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma},
author = {Ishchuk, Valentyn and Olynick, Deirdre L. and Liu, Zuwei and Rangelow, Ivo W.},
abstractNote = {},
doi = {10.1063/1.4927731},
journal = {Journal of Applied Physics},
number = 5,
volume = 118,
place = {United States},
year = {Wed Aug 05 00:00:00 EDT 2015},
month = {Wed Aug 05 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4927731

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

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Works referenced in this record:

SiOxFy passivation layer in silicon cryoetching
journal, November 2005

  • Mellhaoui, X.; Dussart, R.; Tillocher, T.
  • Journal of Applied Physics, Vol. 98, Issue 10, Article No. 104901
  • DOI: 10.1063/1.2133896

Low‐temperature reactive ion etching and microwave plasma etching of silicon
journal, February 1988

  • Tachi, Shinichi; Tsujimoto, Kazunori; Okudaira, Sadayuki
  • Applied Physics Letters, Vol. 52, Issue 8, p. 616-618
  • DOI: 10.1063/1.99382