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Title: Tin Disulfide¿An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1229473
Report Number(s):
BNL-111549-2015-JA
Journal ID: ISSN 1936-0851
DOE Contract Number:  
SC00112704
Resource Type:
Journal Article
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 8; Journal Issue: 10; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

Citation Formats

Huang, Y, Sutter, E, Sadowski, J, Cotlet, M, Monti, O, Racke, D, Neupane, M, Wickramaratne, D, Lake, R, and et al. Tin Disulfide¿An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics. United States: N. p., 2014. Web. doi:10.1021/nn504481r.
Huang, Y, Sutter, E, Sadowski, J, Cotlet, M, Monti, O, Racke, D, Neupane, M, Wickramaratne, D, Lake, R, & et al. Tin Disulfide¿An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics. United States. doi:10.1021/nn504481r.
Huang, Y, Sutter, E, Sadowski, J, Cotlet, M, Monti, O, Racke, D, Neupane, M, Wickramaratne, D, Lake, R, and et al. Tue . "Tin Disulfide¿An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics". United States. doi:10.1021/nn504481r.
@article{osti_1229473,
title = {Tin Disulfide¿An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics},
author = {Huang, Y and Sutter, E and Sadowski, J and Cotlet, M and Monti, O and Racke, D and Neupane, M and Wickramaratne, D and Lake, R and et al.},
abstractNote = {},
doi = {10.1021/nn504481r},
journal = {ACS Nano},
issn = {1936-0851},
number = 10,
volume = 8,
place = {United States},
year = {2014},
month = {9}
}