Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- SC00112704
- OSTI ID:
- 1229416
- Report Number(s):
- BNL-111492-2015-JA
- Journal Information:
- ECS Transactions, Vol. 64, Issue 7; ISSN 1938-6737
- Country of Publication:
- United States
- Language:
- English
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