skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Re-Defining Photovoltaic Efficiency Through Molecule Scale Control (RPEMSC); Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1229373
Report Number(s):
BNL-111449-2015-JA
Journal ID: ISSN 1439-7641
DOE Contract Number:  
SC00112704
Resource Type:
Journal Article
Journal Name:
ChemPhysChem (Online)
Additional Journal Information:
Journal Volume: 15; Journal Issue: 14; Journal ID: ISSN 1439-7641
Publisher:
ChemPubSoc Europe
Country of Publication:
United States
Language:
English

Citation Formats

Kim, C, Hlaing, H, Payne, M, Yager, K, Bonnassieux, Y, Horowitz, G, Anthony, J, and Kymissis, I. Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors. United States: N. p., 2014. Web. doi:10.1002/cphc.201402360.
Kim, C, Hlaing, H, Payne, M, Yager, K, Bonnassieux, Y, Horowitz, G, Anthony, J, & Kymissis, I. Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors. United States. doi:10.1002/cphc.201402360.
Kim, C, Hlaing, H, Payne, M, Yager, K, Bonnassieux, Y, Horowitz, G, Anthony, J, and Kymissis, I. Mon . "Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors". United States. doi:10.1002/cphc.201402360.
@article{osti_1229373,
title = {Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors},
author = {Kim, C and Hlaing, H and Payne, M and Yager, K and Bonnassieux, Y and Horowitz, G and Anthony, J and Kymissis, I},
abstractNote = {},
doi = {10.1002/cphc.201402360},
journal = {ChemPhysChem (Online)},
issn = {1439-7641},
number = 14,
volume = 15,
place = {United States},
year = {2014},
month = {10}
}

Works referenced in this record:

Inkjet printing of single-crystal films
journal, July 2011

  • Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki
  • Nature, Vol. 475, Issue 7356, p. 364-367
  • DOI: 10.1038/nature10313

Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits
journal, February 2008

  • Gundlach, D. J.; Royer, J. E.; Park, S. K.
  • Nature Materials, Vol. 7, Issue 3, p. 216-221
  • DOI: 10.1038/nmat2122

Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films
journal, November 2009

  • Rivnay, Jonathan; Jimison, Leslie H.; Northrup, John E.
  • Nature Materials, Vol. 8, Issue 12, p. 952-958
  • DOI: 10.1038/nmat2570