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Title: Challenges of nickel silicidation in CMOS technologies

Abstract

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamentalmore » learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.« less

Authors:
 [1];  [2]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1]
  1. IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States)
  2. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1228947
Report Number(s):
BNL-111022-2015-JA
Journal ID: ISSN 0167-9317
DOE Contract Number:  
SC00112704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Microelectronic Engineering; Journal Volume: 137; Journal Issue: C
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Breil, Nicolas, Lavoie, Christian, Ozcan, Ahmet, Baumann, Frieder, Klymko, Nancy, Nummy, Karen, Sun, Bing, Jordan-Sweet, Jean, Yu, Jian, Zhu, Frank, Narasimha, Shreesh, and Chudzik, Michael. Challenges of nickel silicidation in CMOS technologies. United States: N. p., 2015. Web. doi:10.1016/j.mee.2014.12.013.
Breil, Nicolas, Lavoie, Christian, Ozcan, Ahmet, Baumann, Frieder, Klymko, Nancy, Nummy, Karen, Sun, Bing, Jordan-Sweet, Jean, Yu, Jian, Zhu, Frank, Narasimha, Shreesh, & Chudzik, Michael. Challenges of nickel silicidation in CMOS technologies. United States. doi:10.1016/j.mee.2014.12.013.
Breil, Nicolas, Lavoie, Christian, Ozcan, Ahmet, Baumann, Frieder, Klymko, Nancy, Nummy, Karen, Sun, Bing, Jordan-Sweet, Jean, Yu, Jian, Zhu, Frank, Narasimha, Shreesh, and Chudzik, Michael. Wed . "Challenges of nickel silicidation in CMOS technologies". United States. doi:10.1016/j.mee.2014.12.013.
@article{osti_1228947,
title = {Challenges of nickel silicidation in CMOS technologies},
author = {Breil, Nicolas and Lavoie, Christian and Ozcan, Ahmet and Baumann, Frieder and Klymko, Nancy and Nummy, Karen and Sun, Bing and Jordan-Sweet, Jean and Yu, Jian and Zhu, Frank and Narasimha, Shreesh and Chudzik, Michael},
abstractNote = {In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.},
doi = {10.1016/j.mee.2014.12.013},
journal = {Microelectronic Engineering},
number = C,
volume = 137,
place = {United States},
year = {Wed Apr 01 00:00:00 EDT 2015},
month = {Wed Apr 01 00:00:00 EDT 2015}
}