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Title: Antiferromagnetic Phase of the Gapless Semiconductor V3Al

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1228920
Report Number(s):
BNL-110995-2015-JA
Journal ID: ISSN 2469-9950
DOE Contract Number:  
SC00112704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B; Journal Volume: 91; Journal Issue: 9
Country of Publication:
United States
Language:
English

Citation Formats

Jamer, M, Assaf, B, Sterbinsky, G, Arena, D, Lewis, L, Saul, A, Radtkte, G, and Heiman, D. Antiferromagnetic Phase of the Gapless Semiconductor V3Al. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.094409.
Jamer, M, Assaf, B, Sterbinsky, G, Arena, D, Lewis, L, Saul, A, Radtkte, G, & Heiman, D. Antiferromagnetic Phase of the Gapless Semiconductor V3Al. United States. doi:10.1103/PhysRevB.91.094409.
Jamer, M, Assaf, B, Sterbinsky, G, Arena, D, Lewis, L, Saul, A, Radtkte, G, and Heiman, D. Wed . "Antiferromagnetic Phase of the Gapless Semiconductor V3Al". United States. doi:10.1103/PhysRevB.91.094409.
@article{osti_1228920,
title = {Antiferromagnetic Phase of the Gapless Semiconductor V3Al},
author = {Jamer, M and Assaf, B and Sterbinsky, G and Arena, D and Lewis, L and Saul, A and Radtkte, G and Heiman, D},
abstractNote = {},
doi = {10.1103/PhysRevB.91.094409},
journal = {Physical Review B},
number = 9,
volume = 91,
place = {United States},
year = {Wed Mar 11 00:00:00 EDT 2015},
month = {Wed Mar 11 00:00:00 EDT 2015}
}