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Title: Antiferromagnetic Phase of the Gapless Semiconductor V3Al

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Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2469-9950
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B; Journal Volume: 91; Journal Issue: 9
Country of Publication:
United States

Citation Formats

Jamer, M, Assaf, B, Sterbinsky, G, Arena, D, Lewis, L, Saul, A, Radtkte, G, and Heiman, D. Antiferromagnetic Phase of the Gapless Semiconductor V3Al. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.094409.
Jamer, M, Assaf, B, Sterbinsky, G, Arena, D, Lewis, L, Saul, A, Radtkte, G, & Heiman, D. Antiferromagnetic Phase of the Gapless Semiconductor V3Al. United States. doi:10.1103/PhysRevB.91.094409.
Jamer, M, Assaf, B, Sterbinsky, G, Arena, D, Lewis, L, Saul, A, Radtkte, G, and Heiman, D. 2015. "Antiferromagnetic Phase of the Gapless Semiconductor V3Al". United States. doi:10.1103/PhysRevB.91.094409.
title = {Antiferromagnetic Phase of the Gapless Semiconductor V3Al},
author = {Jamer, M and Assaf, B and Sterbinsky, G and Arena, D and Lewis, L and Saul, A and Radtkte, G and Heiman, D},
abstractNote = {},
doi = {10.1103/PhysRevB.91.094409},
journal = {Physical Review B},
number = 9,
volume = 91,
place = {United States},
year = 2015,
month = 3
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