skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Antiferromagnetic Phase of the Gapless Semiconductor V3Al

Journal Article · · Physical Review B

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
SC00112704
OSTI ID:
1228920
Report Number(s):
BNL-110995-2015-JA
Journal Information:
Physical Review B, Vol. 91, Issue 9; ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

Similar Records

Antiferromagnetic phase of the gapless semiconductor V 3 Al
Journal Article · Wed Mar 11 00:00:00 EDT 2015 · Physical Review B · OSTI ID:1228920

Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0{sub 3}-type Heusler alloys
Journal Article · Mon Dec 02 00:00:00 EST 2013 · Applied Physics Letters · OSTI ID:1228920

Pressure-driven phase transition from antiferromagnetic semiconductor to nonmagnetic metal in the two-leg ladders AFe2X3 ( A=Ba,K; X=S,Se)
Journal Article · Wed Mar 15 00:00:00 EDT 2017 · Physical Review B · OSTI ID:1228920

Related Subjects