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Title: A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal

Abstract

We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. Additionally, these phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. We have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

Authors:
 [1];  [1];  [2];  [2];  [2];  [2];  [2];  [3];  [3];  [3];  [3];  [3];  [4];  [4]
  1. Aarhus Univ. (Denmark)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  3. Univ. of Ferrara (Italy)
  4. California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF), Arlington, VA (United States); Danish Council for Independent Research, INFN (Denmark)
OSTI Identifier:
1228738
Report Number(s):
SLAC-PUB-16435
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Journal Article
Journal Name:
Physics Letters B
Additional Journal Information:
Journal Name: Physics Letters B
Country of Publication:
United States
Language:
English
Subject:
ACCPHY; PHYS

Citation Formats

Wistisen, T. N., Uggerhoj, U. I., Wienands, U., Markiewicz, T. W., Noble, R. J., Benson, B. L., Smith, T., Bagli, E., Bandiera, L., Germogli, G., Guidi, V., Mazzolari, A., Holtzapple, R., and Tucker, S. A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal. United States: N. p., 2015. Web.
Wistisen, T. N., Uggerhoj, U. I., Wienands, U., Markiewicz, T. W., Noble, R. J., Benson, B. L., Smith, T., Bagli, E., Bandiera, L., Germogli, G., Guidi, V., Mazzolari, A., Holtzapple, R., & Tucker, S. A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal. United States.
Wistisen, T. N., Uggerhoj, U. I., Wienands, U., Markiewicz, T. W., Noble, R. J., Benson, B. L., Smith, T., Bagli, E., Bandiera, L., Germogli, G., Guidi, V., Mazzolari, A., Holtzapple, R., and Tucker, S. 2015. "A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal". United States. https://www.osti.gov/servlets/purl/1228738.
@article{osti_1228738,
title = {A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal},
author = {Wistisen, T. N. and Uggerhoj, U. I. and Wienands, U. and Markiewicz, T. W. and Noble, R. J. and Benson, B. L. and Smith, T. and Bagli, E. and Bandiera, L. and Germogli, G. and Guidi, V. and Mazzolari, A. and Holtzapple, R. and Tucker, S.},
abstractNote = {We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. Additionally, these phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. We have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distribution of channeled particles parallel and orthogonal to the plane.},
doi = {},
url = {https://www.osti.gov/biblio/1228738}, journal = {Physics Letters B},
number = ,
volume = ,
place = {United States},
year = {Thu Dec 03 00:00:00 EST 2015},
month = {Thu Dec 03 00:00:00 EST 2015}
}