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Title: Recombination by grain-boundary type in CdTe

Authors:
 [1];  [2];  [2];  [3];  [2];  [3];  [1];  [2]
  1. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA, Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA
  2. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA
  3. Department of Physics & Astronomy, University of Toledo, Toledo, Ohio 43606, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1228669
Grant/Contract Number:
AC36-08-GO28308
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-03-29 13:56:05; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Moseley, John, Metzger, Wyatt K., Moutinho, Helio R., Paudel, Naba, Guthrey, Harvey L., Yan, Yanfa, Ahrenkiel, Richard K., and Al-Jassim, Mowafak M. Recombination by grain-boundary type in CdTe. United States: N. p., 2015. Web. doi:10.1063/1.4926726.
Moseley, John, Metzger, Wyatt K., Moutinho, Helio R., Paudel, Naba, Guthrey, Harvey L., Yan, Yanfa, Ahrenkiel, Richard K., & Al-Jassim, Mowafak M. Recombination by grain-boundary type in CdTe. United States. doi:10.1063/1.4926726.
Moseley, John, Metzger, Wyatt K., Moutinho, Helio R., Paudel, Naba, Guthrey, Harvey L., Yan, Yanfa, Ahrenkiel, Richard K., and Al-Jassim, Mowafak M. Tue . "Recombination by grain-boundary type in CdTe". United States. doi:10.1063/1.4926726.
@article{osti_1228669,
title = {Recombination by grain-boundary type in CdTe},
author = {Moseley, John and Metzger, Wyatt K. and Moutinho, Helio R. and Paudel, Naba and Guthrey, Harvey L. and Yan, Yanfa and Ahrenkiel, Richard K. and Al-Jassim, Mowafak M.},
abstractNote = {},
doi = {10.1063/1.4926726},
journal = {Journal of Applied Physics},
number = 2,
volume = 118,
place = {United States},
year = {Tue Jul 14 00:00:00 EDT 2015},
month = {Tue Jul 14 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4926726

Citation Metrics:
Cited by: 23works
Citation information provided by
Web of Science

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  • We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB “type.” We examined misorientation-based GB types, including coincident site lattice (CSL) Σ = 3, other-CSL (Σ = 5–49), and general GBs (Σ > 49), which make up ∼47%–48%, ∼6%–8%, and ∼44%–47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ≥97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ∼16%–18% of Σ = 3 GBs are active non-radiativemore » recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl{sub 2}-treated films were studied. The CdCl{sub 2} treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl{sub 2} treatment.« less
  • Cited by 9
  • CdTe devices have reached efficiencies of 22% due to continuing improvements in bulk material properties, including minority carrier lifetime. Device modeling has helped to guide these device improvements by quantifying the impacts of material properties and different device designs on device performance. One of the barriers to truly predictive device modeling is the interdependence of these material properties. For example, interfaces become more critical as bulk properties, particularly, hole density and carrier lifetime, increase. We present device-modeling analyses that describe the effects of recombination at the interfaces and grain boundaries as lifetime and doping of the CdTe layer change. Themore » doping and lifetime should be priorities for maximizing open-circuit voltage (V oc) and efficiency improvements. However, interface and grain boundary recombination become bottlenecks for device performance at increased lifetime and doping levels. In conclusion, this work quantifies and discusses these emerging challenges for next-generation CdTe device efficiency.« less
    Cited by 9