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Title: Examination of electronic structure differences between CIGSSe and CZTSSe by photoluminescence study

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4922493· OSTI ID:1228636
ORCiD logo [1];  [2];  [2];  [1]
  1. Division of Physics and Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
  2. IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, New York 10598, USA

Sponsoring Organization:
USDOE
Grant/Contract Number:
EE0006334
OSTI ID:
1228636
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 117 Journal Issue: 23; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 26 works
Citation information provided by
Web of Science

References (24)

Electronic properties of the Cu 2 ZnSn(Se,S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods journal June 2012
Properties of Cu(In,Ga)Se 2 solar cells with new record efficiencies up to 21.7% : Properties of Cu(In,Ga)Se journal December 2014
Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu 2 ZnSnS 4 absorber : Cu journal November 2011
Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs journal December 1978
Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency journal November 2013
Excitation-power dependence of the near-band-edge photoluminescence of semiconductors journal April 1992
Photoluminescence characterization of a high-efficiency Cu 2 ZnSnS 4 device journal October 2013
Electronically active defects in the Cu 2 ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy journal October 2012
Solution-processed Cu(In,Ga)(S,Se) 2 absorber yielding a 15.2% efficient solar cell : Solution-processed CIGS absorber journal January 2012
Characterization of CuIn(Ga)Se2 Thin Films journal July 1998
Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4 journal March 2010
Edge luminescence of direct-gap semiconductors journal March 1981
Anisotropic hole-mass tensor of CuIn1−xGax(S,Se)2: Presence of free carriers narrows the energy gap journal August 2008
Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells journal August 1998
The Role of Sodium as a Surfactant and Suppressor of Non-Radiative Recombination at Internal Surfaces in Cu 2 ZnSnS 4 journal August 2014
High-Efficiency Devices With Pure Solution-Processed Cu$_{\bf 2}$ ZnSn(S,Se)$_{\bf 4}$ Absorbers journal January 2014
The determination of carrier mobilities in CIGS photovoltaic devices using high-frequency admittance measurements journal June 2005
Optical designs that improve the efficiency of Cu 2 ZnSn(S,Se) 4 solar cells journal January 2014
Band tailing and efficiency limitation in kesterite solar cells journal September 2013
Classification of Lattice Defects in the Kesterite Cu 2 ZnSnS 4 and Cu 2 ZnSnSe 4 Earth-Abundant Solar Cell Absorbers journal February 2013
Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4 journal June 2010
A High-Efficiency Solution-Deposited Thin-Film Photovoltaic Device journal October 2008
Radiative recombination via intrinsic defects in CuxGaySe2 journal April 2001
Dielectric function of Cu(In, Ga)Se 2 -based polycrystalline materials journal February 2013