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Title: H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Authors:
 [1];  [2];  [2];  [2];  [1];  [1]
  1. Imec, Kapeldreef 75, B-3001 Leuven, Belgium
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1228568
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 117 Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., and Jurczak, M. H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. United States: N. p., 2015. Web. doi:10.1063/1.4915946.
Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., & Jurczak, M. H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. United States. doi:10.1063/1.4915946.
Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., and Jurczak, M. Mon . "H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells". United States. doi:10.1063/1.4915946.
@article{osti_1228568,
title = {H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells},
author = {Goux, L. and Kim, J. Y. and Magyari-Kope, B. and Nishi, Y. and Redolfi, A. and Jurczak, M.},
abstractNote = {},
doi = {10.1063/1.4915946},
journal = {Journal of Applied Physics},
number = 12,
volume = 117,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2015},
month = {Mon Mar 23 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4915946

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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Works referenced in this record:

Projector augmented-wave method
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Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011

  • Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
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  • DOI: 10.1038/nmat3070