H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Goux, L.; Kim, J. Y.; Magyari-Kope, B.; Nishi, Y.; Redolfi, A.; Jurczak, M.

doi:10.1063/1.4915946

Title: H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Journal Article · Mon Mar 23 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4915946· OSTI ID:1228568

Goux, L. ^[1]; Kim, J. Y. ^[2]; Magyari-Kope, B. ^[2]; Nishi, Y. ^[2]; Redolfi, A. ^[1]; Jurczak, M. ^[1]

Imec, Kapeldreef 75, B-3001 Leuven, Belgium
Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1228568

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 117 Journal Issue: 12; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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References (26)

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