Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs
Journal Article
·
· Journal of Applied Physics
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering and Radiological Sciences
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering; Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0000957
- OSTI ID:
- 1370088
- Alternate ID(s):
- OSTI ID: 1228532
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 6; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 3 works
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