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Title: Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

Authors:
 [1];  [1]; ORCiD logo [2];  [3];  [2];  [2];  [2]; ORCiD logo [4]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
  2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
  3. Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109, USA
  4. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA, Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1228532
Grant/Contract Number:  
SC0000957
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 117 Journal Issue: 6; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Warren, M. V., Canniff, J. C., Chi, H., Naab, F., Stoica, V. A., Clarke, R., Uher, C., and Goldman, R. S.. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs. United States: N. p., 2015. Web. doi:10.1063/1.4906992.
Warren, M. V., Canniff, J. C., Chi, H., Naab, F., Stoica, V. A., Clarke, R., Uher, C., & Goldman, R. S.. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs. United States. doi:10.1063/1.4906992.
Warren, M. V., Canniff, J. C., Chi, H., Naab, F., Stoica, V. A., Clarke, R., Uher, C., and Goldman, R. S.. Tue . "Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs". United States. doi:10.1063/1.4906992.
@article{osti_1228532,
title = {Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs},
author = {Warren, M. V. and Canniff, J. C. and Chi, H. and Naab, F. and Stoica, V. A. and Clarke, R. and Uher, C. and Goldman, R. S.},
abstractNote = {},
doi = {10.1063/1.4906992},
journal = {Journal of Applied Physics},
number = 6,
volume = 117,
place = {United States},
year = {Tue Feb 10 00:00:00 EST 2015},
month = {Tue Feb 10 00:00:00 EST 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4906992

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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Works referenced in this record:

Complex thermoelectric materials
journal, February 2008

  • Snyder, G. Jeffrey; Toberer, Eric S.
  • Nature Materials, Vol. 7, Issue 2, p. 105-114
  • DOI: 10.1038/nmat2090

Thin-film thermoelectric devices with high room-temperature figures of merit
journal, October 2001

  • Venkatasubramanian, Rama; Siivola, Edward; Colpitts, Thomas
  • Nature, Vol. 413, Issue 6856, p. 597-602
  • DOI: 10.1038/35098012