skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Stirring potential for indirect excitons

; ; ; ; ; ORCiD logo; ; ;
Publication Date:
Sponsoring Org.:
OSTI Identifier:
Grant/Contract Number:
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 2; Related Information: CHORUS Timestamp: 2016-12-22 08:46:42; Journal ID: ISSN 0021-8979
American Institute of Physics
Country of Publication:
United States

Citation Formats

Hasling, M. W., Kuznetsova, Y. Y., Andreakou, P., Leonard, J. R., Calman, E. V., Dorow, C. J., Butov, L. V., Hanson, M., and Gossard, A. C. Stirring potential for indirect excitons. United States: N. p., 2015. Web. doi:10.1063/1.4905080.
Hasling, M. W., Kuznetsova, Y. Y., Andreakou, P., Leonard, J. R., Calman, E. V., Dorow, C. J., Butov, L. V., Hanson, M., & Gossard, A. C. Stirring potential for indirect excitons. United States. doi:10.1063/1.4905080.
Hasling, M. W., Kuznetsova, Y. Y., Andreakou, P., Leonard, J. R., Calman, E. V., Dorow, C. J., Butov, L. V., Hanson, M., and Gossard, A. C. 2015. "Stirring potential for indirect excitons". United States. doi:10.1063/1.4905080.
title = {Stirring potential for indirect excitons},
author = {Hasling, M. W. and Kuznetsova, Y. Y. and Andreakou, P. and Leonard, J. R. and Calman, E. V. and Dorow, C. J. and Butov, L. V. and Hanson, M. and Gossard, A. C.},
abstractNote = {},
doi = {10.1063/1.4905080},
journal = {Journal of Applied Physics},
number = 2,
volume = 117,
place = {United States},
year = 2015,
month = 1

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4905080

Citation Metrics:
Cited by: 7works
Citation information provided by
Web of Science

Save / Share:
  • We observe and analyze strongly nonlinear photoluminescence kinetics of indirect excitons in GaAs/AlGaAs coupled quantum wells at low bath temperatures, {ge}50 mK . The long recombination lifetime of indirect excitons promotes accumulation of these Bose particles in the lowest energy states and allows the photoexcited excitons to cool down to temperatures where the dilute 2D gas of indirect excitons becomes statistically degenerate. Our main result{emdash}a strong enhancement of the exciton scattering rate to the low-energy states with increasing concentration of the indirect excitons{emdash}reveals bosonic stimulation of exciton scattering, which is a signature of a degenerate Bose-gas of excitons.
  • This paper investigates the luminescence properties of the indirect solid solutions of In /SUB 1-x/ Ga /SUB x/ P obtained at high levels of excitation. The luminescence properties were obtained using the cathode luminescence technique. The complex luminescence band that arises for sufficiently high levels of excitation at T = 9 K is attributed to the luminescence of an electron-hole drop. The transformation of spectral form of the EHD band with the transition from GaP to In /SUB 1-x/ Ga /SUB x/ P is attributed to a simultaneous reduction in the contribution of the TA and TO replicas and tomore » the appearance of a phononless component in the luminescence of the electron-hole drop.« less
  • We present an accurate calculation of exciton states in coupled quantum wells (CQWs) in an external electric field. The energies, oscillator strengths, and absorption spectrum of excitons in symmetric AlGaAs CQWs and asymmetric InGaAs CQWs are calculated for different electric fields. It is demonstrated that the ground state of the system switches from direct to indirect exciton with dramatic changes of its binding energy and oscillator strength, the calculated radiative lifetime being in quantitative agreement with a photoluminescence decay measurement in AlGaAs CQWs. At the same time, the brightest excited state represents a direct exciton which is almost unaffected bymore » the external field. We have also applied the developed technique to the calculation of exciton-polariton states in CQW microcavities. In the strong coupling regime, the field dependent reflectivity shows a remarkable polariton anticrossing which is in good agreement with a recent experimental observation.« less
  • We study the unitary propagation of a two-particle one-dimensional Schrödinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coulomb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolutions during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices, the transmissionmore » or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic, and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.« less
  • For a Schottky-diode structure containing two narrow GaAs (3.5 nm) and AlAs (5 nm) heterolayers, the photoluminescence properties of long-living dipolar excitons, indirect in both real and momentum space, are studied in perpendicular magnetic fields in the Faraday configuration of measurements. With an external perpendicular electric field, the lifetimes of such excitons can be extended to ∼1 μs. Nevertheless the exciton spin subsystem remains nonequilibrium: the exciton spin-relaxation time is even longer. The degree of circular polarization of the photoluminescence attains 80% in a field of 6 T. With an electric field, it is possible to control the degree andmore » sign of the circular polarization.« less