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Title: Defect chemistry and chalcogen diffusion in thin-film Cu2ZnSnSe4 materials

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4907951· OSTI ID:1228131
 [1];  [1];  [1]
  1. National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401, USA

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1228131
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 117 Journal Issue: 7; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

References (22)

Investigation of diffusional intermixing in Si/Co/Ta system by Secondary Neutral Mass Spectrometry journal January 2012
Annealing Temperature Dependence of Properties of Cu 2 ZnSnS 4 Thin Films Prepared by Sol–Gel Sulfurization Method journal May 2011
Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency journal November 2013
Self diffusion of sulphur in zinc sulphide journal September 1967
Self-diffusion of Zn and Se in ZnSe journal November 1971
Defect Chemistry: Composition, Transport, and Reactions in the Solid State; Part I: Thermodynamics journal March 1993
MoSe 2 layer formation at Cu(In,Ga)Se 2/Mo Interfaces in High Efficiency Cu(In1- xGa x)Se 2 Solar Cells journal January 1998
First-principles calculations of vacancy formation in In-free photovoltaic semiconductor Cu2ZnSnSe4 journal August 2011
Diffusion mechanisms in II–VI materials journal January 1988
Electrodeposited Cu 2 ZnSnSe 4 thin film solar cell with 7% power conversion efficiency : Power conversion efficiency of Cu journal January 2013
Diffusion of the Chalcogens in the II-VI Compounds journal May 1967
Co-evaporated Cu2ZnSnSe4 films and devices journal June 2012
A Detrimental Reaction at the Molybdenum Back Contact in Cu 2 ZnSn(S,Se) 4 Thin-Film Solar Cells journal November 2012
Dependence on Annealing Temperature of Properties of Cu 2 ZnSnS 4 Thin Films Prepared by Sol–Gel Sulfurization Method journal January 2011
On the kinetics of MoSe 2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact journal March 2013
Kesterite Successes, Ongoing Work, and Challenges: A Perspective From Vacuum Deposition journal January 2013
Control of an interfacial MoSe 2 layer in Cu 2 ZnSnSe 4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier journal July 2012
Computer simulation of the structure and defect properties of zinc sulfide journal January 1995
Beyond 11% Efficiency: Characteristics of State-of-the-Art Cu 2 ZnSn(S,Se) 4 Solar Cells journal August 2012
Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4 journal January 2010
Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4 journal June 2010
Investigations on self-diffusion and diffusion of dopants in II–VI semiconductor compounds depending on its non-stoichiometry journal August 1999

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