Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices
Abstract
Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.
- Inventors:
- Publication Date:
- Research Org.:
- UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (United States) MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1227941
- Patent Number(s):
- 9,209,378
- Application Number:
- 14/310,840
- Assignee:
- UNIVERSITY OF HOUSTON SYSTEM
- DOE Contract Number:
- EE0005806
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Jun 20
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Jie, Qing, Ren, Zhifeng, and Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States: N. p., 2015.
Web.
Jie, Qing, Ren, Zhifeng, & Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States.
Jie, Qing, Ren, Zhifeng, and Chen, Gang. 2015.
"Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices". United States. https://www.osti.gov/servlets/purl/1227941.
@article{osti_1227941,
title = {Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices},
author = {Jie, Qing and Ren, Zhifeng and Chen, Gang},
abstractNote = {Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.},
doi = {},
url = {https://www.osti.gov/biblio/1227941},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 08 00:00:00 EST 2015},
month = {Tue Dec 08 00:00:00 EST 2015}
}
Works referenced in this record:
Nanostructured bulk thermoelectric material
patent-application, June 2006
- Zhang, Minjuan; Lu, Yunfeng
- US Patent Application 11/120731; 20060118158
Thermoelectric conversion element and thermoelectric conversion module
patent-application, January 2012
- Iida, Tsutomu; Oguni, Yohei; Nemoto, Takashi
- US Patent Application 13/254595; 20120000500
Niobium oxide-based thermoelectric composites
patent-application, May 2013
- Backhaus-Ricoult, Monika
- US Patent Application 13/298633; 20130126800