Epitaxial Cu2ZnSnS4 thin film on Si (111) 4° substrate

Song, Ning; Young, Matthew; Liu, Fangyang; Erslev, Pete; Wilson, Samual; Harvey, Steven P.; Teeter, Glenn; Huang, Yidan; Hao, Xiaojing; Green, Martin A.

doi:10.1063/1.4922992

Title: Epitaxial Cu2ZnSnS4 thin film on Si (111) 4° substrate

Journal Article · Mon Jun 22 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4922992· OSTI ID:1226761

Song, Ning ^[1]; Young, Matthew ^[2]; Liu, Fangyang ^[1]; Erslev, Pete ^[2]; Wilson, Samual ^[3]; Harvey, Steven P. ^[2]; Teeter, Glenn ^[2]; Huang, Yidan ^[1]; Hao, Xiaojing ^[1]; Green, Martin A. ^[1]

School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia
National Renewable Energy Laboratory, Golden, Colorado 80403, USA
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1226761

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 106 Journal Issue: 25; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 38 works

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References (30)

Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell Masuko, Keiichiro; Shigematsu, Masato; Hashiguchi, Taiki IEEE Journal of Photovoltaics, Vol. 4, Issue 6 https://doi.org/10.1109/JPHOTOV.2014.2352151	journal	November 2014
A low-temperature order-disorder transition in Cu ₂ ZnSnS ₄ thin films Scragg, Jonathan J. S.; Choubrac, Léo; Lafond, Alain Applied Physics Letters, Vol. 104, Issue 4 https://doi.org/10.1063/1.4863685	journal	January 2014
Electronic structure of GaN stacking faults Bandić, Z. Z.; McGill, T. C.; Ikonić, Z. Physical Review B, Vol. 56, Issue 7 https://doi.org/10.1103/PhysRevB.56.3564	journal	August 1997
Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation Shin, Byungha; Zhu, Yu; Gershon, Talia Thin Solid Films, Vol. 556 https://doi.org/10.1016/j.tsf.2013.12.046	journal	April 2014
Low-cost fabrication of Cu2ZnSnS4 thin films for solar cell absorber layers Sheng, Xia; Wang, Lei; Tian, Ye Journal of Materials Science: Materials in Electronics, Vol. 24, Issue 2 https://doi.org/10.1007/s10854-012-0824-4	journal	July 2012
The path to 25% silicon solar cell efficiency: History of silicon cell evolution Green, Martin A. Progress in Photovoltaics: Research and Applications, Vol. 17, Issue 3 https://doi.org/10.1002/pip.892	journal	May 2009
Effect of microgravity on the crystallization of a self-assembling layered material Ahari, Homayoun; Bedard, Robert L.; Bowes, Carol L. Nature, Vol. 388, Issue 6645 https://doi.org/10.1038/42213	journal	August 1997
Direct growth of heteroepitaxial CuInSe2 on GaN (0001) by molecular beam epitaxy Shih, Cheng-Hung; Lo, Ikai; You, Shuo-Ting Thin Solid Films, Vol. 574 https://doi.org/10.1016/j.tsf.2014.11.048	journal	January 2015
Overview on SiN surface passivation of crystalline silicon solar cells Aberle, Armin G. Solar Energy Materials and Solar Cells, Vol. 65, Issue 1-4 https://doi.org/10.1016/S0927-0248(00)00099-4	journal	January 2001
Solid-State NMR and Raman Spectroscopy To Address the Local Structure of Defects and the Tricky Issue of the Cu/Zn Disorder in Cu-Poor, Zn-Rich CZTS Materials Paris, Michaël; Choubrac, Léo; Lafond, Alain Inorganic Chemistry, Vol. 53, Issue 16 https://doi.org/10.1021/ic5012346	journal	July 2014
A thin-film solar cell of high-quality -FeSi/Si heterojunction prepared by sputtering Liu, Z.; Wang, S.; Otogawa, N. Solar Energy Materials and Solar Cells, Vol. 90, Issue 3 https://doi.org/10.1016/j.solmat.2005.03.014	journal	February 2006
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions Geisz, J. F.; Friedman, D. J.; Ward, J. S. Applied Physics Letters, Vol. 93, Issue 12, Article No. 123505 https://doi.org/10.1063/1.2988497	journal	September 2008
Development of CZTS-based thin film solar cells Katagiri, Hironori; Jimbo, Kazuo; Maw, Win Shwe Thin Solid Films, Vol. 517, Issue 7, p. 2455-2460 https://doi.org/10.1016/j.tsf.2008.11.002	journal	February 2009
In-depth resolved Raman scattering analysis for the identification of secondary phases: Characterization of Cu2ZnSnS4 layers for solar cell applications Fontané, X.; Calvo-Barrio, L.; Izquierdo-Roca, V. Applied Physics Letters, Vol. 98, Issue 18 https://doi.org/10.1063/1.3587614	journal	May 2011
Near-infrared photodetection of β-FeSi ₂ /Si heterojunction photodiodes at low temperatures Izumi, Shota; Shaban, Mahmoud; Promros, Nathaporn Applied Physics Letters, Vol. 102, Issue 3 https://doi.org/10.1063/1.4789391	journal	January 2013
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2583	journal	March 2013
Multiwavelength excitation Raman scattering study of polycrystalline kesterite Cu ₂ ZnSnS ₄ thin films Dimitrievska, M.; Fairbrother, A.; Fontané, X. Applied Physics Letters, Vol. 104, Issue 2 https://doi.org/10.1063/1.4861593	journal	January 2014
Structure of extended defects in epitaxial CuInS 2 /Si(111) Hunger, R.; Su, D.; Krost, A. Thin Solid Films, Vol. 361-362 https://doi.org/10.1016/S0040-6090(99)00812-3	journal	February 2000
Preparation and Properties of Cu ₂ ZnSnS ₄ Absorber and Cu ₂ ZnSnS ₄ /Amorphous Silicon Thin-Film Solar Cell Jiang, Feng; Shen, Honglie; Wang, Wei Applied Physics Express, Vol. 4, Issue 7 https://doi.org/10.1143/APEX.4.074101	journal	June 2011
Growth of Cu₂ZnSnS₄ thin films on Si (100) substrates by multisource evaporation Oishi, Koichiro; Saito, Genki; Ebina, Kiyoshi Thin Solid Films, Vol. 517, Issue 4, p. 1449-1452 https://doi.org/10.1016/j.tsf.2008.09.056	journal	December 2008
Fabrication and characterization of Al/Cu ₂ ZnSnS ₄ / n -Si/Al heterojunction photodiodes : Fabrication and characterization of Al/Cu Turgut, Güven; Keskenler, Eyüp Fahri; Aydın, Serdar physica status solidi (a), Vol. 211, Issue 3 https://doi.org/10.1002/pssa.201330096	journal	November 2013
Polymorphism and structural defects in Li2FeSiO4 Boulineau, Adrien; Sirisopanaporn, Chutchamon; Dominko, Robert Dalton Transactions, Vol. 39, Issue 27 https://doi.org/10.1039/c002815k	journal	January 2010
Solar cell efficiency tables (Version 45): Solar cell efficiency tables Green, Martin A.; Emery, Keith; Hishikawa, Yoshihiro Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 1 https://doi.org/10.1002/pip.2573	journal	December 2014
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells Shockley, William; Queisser, Hans J. Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519 https://doi.org/10.1063/1.1736034	journal	March 1961
Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe-based films grown on GaAs Kuo, L. H. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 4 https://doi.org/10.1116/1.587880	journal	July 1995
Shallow electron states of bounded intrinsic stacking faults in silicon Lehto, Niklas Physical Review B, Vol. 55, Issue 23 https://doi.org/10.1103/PhysRevB.55.15601	journal	June 1997
Element substitution from substrates in Bi ₂ Se ₃ , Bi ₂ Te ₃ and Sb ₂ Te ₃ overlayers deposited by hot wall epitaxy Takagaki, Y.; Jahn, U.; Jenichen, B. Semiconductor Science and Technology, Vol. 29, Issue 9 https://doi.org/10.1088/0268-1242/29/9/095021	journal	August 2014
Structural, thermodynamical and optical properties of Cu2-II-IV-VI4 quaternary compounds Matsushita, H.; Ichikawa, T.; Katsui, A. Journal of Materials Science, Vol. 40, Issue 8 https://doi.org/10.1007/s10853-005-1223-5	journal	April 2005
Growth and Raman scattering characterization of Cu2ZnSnS4 thin films Fernandes, P. A.; Salomé, P. M. P.; da Cunha, A. F. Thin Solid Films, Vol. 517, Issue 7 https://doi.org/10.1016/j.tsf.2008.11.031	journal	February 2009
Characteristics of In-Substituted CZTS Thin Film and Bifacial Solar Cell Ge, Jie; Chu, Junhao; Jiang, Jinchun ACS Applied Materials & Interfaces, Vol. 6, Issue 23 https://doi.org/10.1021/am505980n	journal	November 2014

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