Origin of the enhanced piezoelectric thermal stability in BiScO3-PbTiO3 single crystals
- Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
- Pennsylvania State Univ., University Park, PA (United States)
- Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Carnegie Inst. of Washington, Argonne, IL (United States)
BiScO3-PbTiO3 single crystals were reported to possess high piezoelectric coefficient of 1200 pC/N and Curie temperature of >400 °C, exhibiting excellent thermal stability of properties up to 350 °C. However, the origin of the thermal stability is yet unclear. In this research, high resolution synchrotron-based technique was used to study the temperature driven structural evolution in BiScO3-PbTiO3 system, where two competing symmetries and local distortion were observed, accounting for the high piezoelectric activity. Here, a strong correlation between thermal stability of structure and temperature-dependent properties was established, which will benefit the design of ferroelectric materials with broad temperature usage range.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1225087
- Alternate ID(s):
- OSTI ID: 1226756
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 23; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- ENGLISH
Web of Science
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