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Title: Origin of the enhanced piezoelectric thermal stability in BiScO3-PbTiO3 single crystals

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4922345· OSTI ID:1225087
 [1];  [1];  [2];  [3]
  1. Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
  2. Pennsylvania State Univ., University Park, PA (United States)
  3. Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Carnegie Inst. of Washington, Argonne, IL (United States)

BiScO3-PbTiO3 single crystals were reported to possess high piezoelectric coefficient of 1200 pC/N and Curie temperature of >400 °C, exhibiting excellent thermal stability of properties up to 350 °C. However, the origin of the thermal stability is yet unclear. In this research, high resolution synchrotron-based technique was used to study the temperature driven structural evolution in BiScO3-PbTiO3 system, where two competing symmetries and local distortion were observed, accounting for the high piezoelectric activity. Here, a strong correlation between thermal stability of structure and temperature-dependent properties was established, which will benefit the design of ferroelectric materials with broad temperature usage range.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1225087
Alternate ID(s):
OSTI ID: 1226756
Journal Information:
Applied Physics Letters, Vol. 106, Issue 23; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
ENGLISH
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

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