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Title: Evolution of GaAs nanowire geometry in selective area epitaxy

Authors:
 [1];  [1];  [1]
  1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, International Institute for Carbon-Neutral Energy Research (I2CNER), University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1226729
Grant/Contract Number:  
DMR #1006581
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Bassett, Kevin P., Mohseni, Parsian K., and Li, Xiuling. Evolution of GaAs nanowire geometry in selective area epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4916347.
Bassett, Kevin P., Mohseni, Parsian K., & Li, Xiuling. Evolution of GaAs nanowire geometry in selective area epitaxy. United States. doi:10.1063/1.4916347.
Bassett, Kevin P., Mohseni, Parsian K., and Li, Xiuling. Tue . "Evolution of GaAs nanowire geometry in selective area epitaxy". United States. doi:10.1063/1.4916347.
@article{osti_1226729,
title = {Evolution of GaAs nanowire geometry in selective area epitaxy},
author = {Bassett, Kevin P. and Mohseni, Parsian K. and Li, Xiuling},
abstractNote = {},
doi = {10.1063/1.4916347},
journal = {Applied Physics Letters},
number = 13,
volume = 106,
place = {United States},
year = {Tue Mar 31 00:00:00 EDT 2015},
month = {Tue Mar 31 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4916347

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

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