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Title: Nanoscale pressure sensors realized from suspended graphene membrane devices

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Publication Date:
Sponsoring Org.:
OSTI Identifier:
Grant/Contract Number:
ER 46940-DE-SC0010597
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 8; Related Information: CHORUS Timestamp: 2016-12-29 10:01:08; Journal ID: ISSN 0003-6951
American Institute of Physics
Country of Publication:
United States

Citation Formats

Aguilera-Servin, Juan, Miao, Tengfei, and Bockrath, Marc. Nanoscale pressure sensors realized from suspended graphene membrane devices. United States: N. p., 2015. Web. doi:10.1063/1.4908176.
Aguilera-Servin, Juan, Miao, Tengfei, & Bockrath, Marc. Nanoscale pressure sensors realized from suspended graphene membrane devices. United States. doi:10.1063/1.4908176.
Aguilera-Servin, Juan, Miao, Tengfei, and Bockrath, Marc. 2015. "Nanoscale pressure sensors realized from suspended graphene membrane devices". United States. doi:10.1063/1.4908176.
title = {Nanoscale pressure sensors realized from suspended graphene membrane devices},
author = {Aguilera-Servin, Juan and Miao, Tengfei and Bockrath, Marc},
abstractNote = {},
doi = {10.1063/1.4908176},
journal = {Applied Physics Letters},
number = 8,
volume = 106,
place = {United States},
year = 2015,
month = 2

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4908176

Citation Metrics:
Cited by: 12works
Citation information provided by
Web of Science

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  • We study the transport properties of graphene layers placed over ∼200 nm triangular holes via attached electrodes under applied pressure. We find that the injected current division between counter electrodes depends on pressure and can be used to realize a nanoscale pressure sensor. Estimating various potential contributions to the resistivity change of the deflected graphene membrane including piezoresistivity, changing gate capacitance, and the valley Hall effect due to the pressure-induced synthetic magnetic field, we find that the valley Hall effect yields the largest expected contribution to the longitudinal resistivity modulation for accessible device parameters. Such devices in the ballistic transport regimemore » may enable the realization of tunable valley polarized electron sources.« less
  • A UCST polymer functionalized graphene oxide as a thermally responsive ion permeable membrane.
  • This paper reports the design and analysis of a type of piezoresistive pressure sensor for micro-pressure measurement with a cross beam-membrane (CBM) structure. This new silicon substrate-based sensor has the advantages of a miniature structure and high sensitivity, linearity, and accuracy. By using the finite element method to analyze the stress distribution of the new structure and subsequently deducing the relationship between structural dimensions and mechanical performances, equations used to determine the CBM structure are established. Based on the CBM model and our stress and deflections equations, sensor fabrication is then performed on the silicon wafer via a process includingmore » anisotropy chemical etching and inductively coupled plasma. The structure's merits, such as linearity, sensitivity, and repeatability, have been investigated under the pressure of 5 kPa. Our results show that the precision of these equations is {+-}0.19%FS, indicating that this new small-sized structure offers easy preparation, high sensitivity, and high accuracy for micro-pressure measurement.« less
  • Using the AC Josephson effect in the superconductor-vacuum-superconductor tunnel junction of a scanning tunneling microscope (STM), we demonstrate the generation of GHz radiation. With the macroscopic STM tip acting as a λ/4-monopole antenna, we first show that the atomic scale Josephson junction in the STM is sensitive to its frequency-dependent environmental impedance in the GHz regime. Further, enhancing Cooper pair tunneling via excitations of the tip eigenmodes, we are able to generate high-frequency radiation. We find that for vanadium junctions, the enhanced photon emission can be tuned from about 25 GHz to 200 GHz and that large photon flux in excess ofmore » 10{sup 20 }cm{sup −2} s{sup −1} is reached in the tunnel junction. These findings demonstrate that the atomic scale Josephson junction in an STM can be employed as a full spectroscopic tool for GHz frequencies on the atomic scale.« less