Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao -Yu; Liu, Shi; Zhang, Yong -Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

doi:10.1063/1.4913312

Title: Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Journal Article · Wed Feb 18 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913312· OSTI ID:1188579

Zuo, Daniel ^[1]; Liu, Runyu ^[1]; Wasserman, Daniel ^[1]; Mabon, James ^[1]; He, Zhao -Yu ^[2]; Liu, Shi ^[2]; Zhang, Yong -Hang ^[2]; Kadlec, Emil A. ^[3]; Olson, Benjamin V. ^[3]; Shaner, Eric A. ^[3]

Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
Arizona State Univ., Tempe, AZ (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10^–2 cm²/s. We also report on the device's optical response characteristics at 78 K.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1188579

Alternate ID(s):: OSTI ID: 1226712

Report Number(s):: SAND-2014-20720J; APPLAB; 553947

Journal Information:: Applied Physics Letters, Vol. 106, Issue 7; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 28 works

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References (15)

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Cited By (5)

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Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors Rhiger, David R.; Smith, Edward P. Journal of Electronic Materials, Vol. 48, Issue 10 https://doi.org/10.1007/s11664-019-07319-y	journal	June 2019
Theoretical study of native point defects in strained-layer superlattice systems Krishnamurthy, S.; Yu, Zhi Gang Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5004176	journal	April 2018
Temperature-Dependent Minority-Carrier Mobility in $p$ -Type $In As$ / $Ga Sb$ Type-II-Superlattice Photodetectors Taghipour, Z.; Lee, S.; Myers, S. A. Physical Review Applied, Vol. 11, Issue 2 https://doi.org/10.1103/physrevapplied.11.024047	journal	February 2019
Fabrication and Characterization of an InAs(Sb)/In _x Ga _{1− x} As _y Sb _{1− y} Type‐II Superlattice Du, Peng; Fang, Xuan; Gong, Qian physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 12 https://doi.org/10.1002/pssr.201970045	journal	May 2019

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