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Title: Occupied and unoccupied electronic structure of Na doped MoS2(0001)

Authors:
 [1]; ORCiD logo [2];  [1];  [3];  [4];  [5];  [5];  [4];  [4];  [6];  [3];  [2]; ORCiD logo [1]
  1. Department of Physics and Astronomy, Theodore Jorgensen Hall, 855 N 16th St., University of Nebraska, Lincoln, Nebraska 68588-0299, USA
  2. Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816, USA
  3. Department of Chemistry and the Materials Science and Engineering Program, University of California - Riverside, Riverside, California 92521, USA
  4. Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-0046, Japan
  5. Graduate School of Science, Hiroshima University, Higashi-Hiroshima 739-8526, Japan
  6. Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-0046, Japan, Graduate School of Science, Hiroshima University, Higashi-Hiroshima 739-8526, Japan
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1226609
Grant/Contract Number:  
FG02-07ER15842; FG02-07ER46354
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 24; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Komesu, Takashi, Le, Duy, Zhang, Xin, Ma, Quan, Schwier, Eike F., Kojima, Yohei, Zheng, Mingtian, Iwasawa, Hideaki, Shimada, Kenya, Taniguchi, Masaki, Bartels, Ludwig, Rahman, Talat S., and Dowben, P. A.. Occupied and unoccupied electronic structure of Na doped MoS2(0001). United States: N. p., 2014. Web. doi:10.1063/1.4903824.
Komesu, Takashi, Le, Duy, Zhang, Xin, Ma, Quan, Schwier, Eike F., Kojima, Yohei, Zheng, Mingtian, Iwasawa, Hideaki, Shimada, Kenya, Taniguchi, Masaki, Bartels, Ludwig, Rahman, Talat S., & Dowben, P. A.. Occupied and unoccupied electronic structure of Na doped MoS2(0001). United States. doi:10.1063/1.4903824.
Komesu, Takashi, Le, Duy, Zhang, Xin, Ma, Quan, Schwier, Eike F., Kojima, Yohei, Zheng, Mingtian, Iwasawa, Hideaki, Shimada, Kenya, Taniguchi, Masaki, Bartels, Ludwig, Rahman, Talat S., and Dowben, P. A.. Mon . "Occupied and unoccupied electronic structure of Na doped MoS2(0001)". United States. doi:10.1063/1.4903824.
@article{osti_1226609,
title = {Occupied and unoccupied electronic structure of Na doped MoS2(0001)},
author = {Komesu, Takashi and Le, Duy and Zhang, Xin and Ma, Quan and Schwier, Eike F. and Kojima, Yohei and Zheng, Mingtian and Iwasawa, Hideaki and Shimada, Kenya and Taniguchi, Masaki and Bartels, Ludwig and Rahman, Talat S. and Dowben, P. A.},
abstractNote = {},
doi = {10.1063/1.4903824},
journal = {Applied Physics Letters},
number = 24,
volume = 105,
place = {United States},
year = {Mon Dec 15 00:00:00 EST 2014},
month = {Mon Dec 15 00:00:00 EST 2014}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4903824

Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

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Works referenced in this record:

Projector augmented-wave method
journal, December 1994


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Ab initiomolecular dynamics for liquid metals
journal, January 1993