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Title: THz generation mechanisms in the semiconductor alloy, GaAs1−xBix

Authors:
 [1];  [2]; ORCiD logo [1]
  1. Indian Institute of Science Education and Research Thiruvananthapuram (IISER-TVM), CET Campus, Engineering College PO, Thiruvananthapuram, Kerala, India
  2. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1224876
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Vaisakh, C. P., Mascarenhas, A., and Kini, R. N. THz generation mechanisms in the semiconductor alloy, GaAs1−xBix. United States: N. p., 2015. Web. doi:10.1063/1.4933290.
Vaisakh, C. P., Mascarenhas, A., & Kini, R. N. THz generation mechanisms in the semiconductor alloy, GaAs1−xBix. United States. doi:10.1063/1.4933290.
Vaisakh, C. P., Mascarenhas, A., and Kini, R. N. Fri . "THz generation mechanisms in the semiconductor alloy, GaAs1−xBix". United States. doi:10.1063/1.4933290.
@article{osti_1224876,
title = {THz generation mechanisms in the semiconductor alloy, GaAs1−xBix},
author = {Vaisakh, C. P. and Mascarenhas, A. and Kini, R. N.},
abstractNote = {},
doi = {10.1063/1.4933290},
journal = {Journal of Applied Physics},
number = 16,
volume = 118,
place = {United States},
year = {Fri Oct 23 00:00:00 EDT 2015},
month = {Fri Oct 23 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4933290

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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Works referenced in this record:

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs 1 x Bi x
journal, February 2011