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Title: Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4902921· OSTI ID:1224323
 [1];  [1];  [1];  [1]
  1. Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, USA

Sponsoring Organization:
USDOE
Grant/Contract Number:
FG02-08ER-46520
OSTI ID:
1224323
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 105 Journal Issue: 21; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

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Random nanolasing in the Anderson localized regime journal March 2014
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Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite Mg x Zn 1-x O Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region Photodetectors journal April 2003
UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes journal July 2006
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Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium journal May 2005
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Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO∕p-ZnO:As∕GaAs structure journal March 2007

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