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Title: Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [2];  [2];  [3];  [2];  [1]
  1. Harvard University, Cambridge, Massachusetts 02138, USA
  2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
  3. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA, Duke University, Durham, North Carolina 27708, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1224302
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Park, Helen Hejin, Jayaraman, Ashwin, Heasley, Rachel, Yang, Chuanxi, Hartle, Lauren, Mankad, Ravin, Haight, Richard, Mitzi, David B., Gunawan, Oki, and Gordon, Roy G. Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties. United States: N. p., 2014. Web. doi:10.1063/1.4901899.
Park, Helen Hejin, Jayaraman, Ashwin, Heasley, Rachel, Yang, Chuanxi, Hartle, Lauren, Mankad, Ravin, Haight, Richard, Mitzi, David B., Gunawan, Oki, & Gordon, Roy G. Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties. United States. doi:10.1063/1.4901899.
Park, Helen Hejin, Jayaraman, Ashwin, Heasley, Rachel, Yang, Chuanxi, Hartle, Lauren, Mankad, Ravin, Haight, Richard, Mitzi, David B., Gunawan, Oki, and Gordon, Roy G. Mon . "Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties". United States. doi:10.1063/1.4901899.
@article{osti_1224302,
title = {Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties},
author = {Park, Helen Hejin and Jayaraman, Ashwin and Heasley, Rachel and Yang, Chuanxi and Hartle, Lauren and Mankad, Ravin and Haight, Richard and Mitzi, David B. and Gunawan, Oki and Gordon, Roy G.},
abstractNote = {},
doi = {10.1063/1.4901899},
journal = {Applied Physics Letters},
number = 20,
volume = 105,
place = {United States},
year = {Mon Nov 17 00:00:00 EST 2014},
month = {Mon Nov 17 00:00:00 EST 2014}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4901899

Citation Metrics:
Cited by: 6 works
Citation information provided by
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Works referenced in this record:

Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency
journal, November 2013

  • Wang, Wei; Winkler, Mark T.; Gunawan, Oki
  • Advanced Energy Materials, Vol. 4, Issue 7, Article No. 1301465
  • DOI: 10.1002/aenm.201301465

SnS thin-films by RF sputtering at room temperature
journal, August 2011

  • Hartman, Katy; Johnson, J. L.; Bertoni, Mariana I.
  • Thin Solid Films, Vol. 519, Issue 21, p. 7421-7424
  • DOI: 10.1016/j.tsf.2010.12.186