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Title: Intrinsic surface passivation of CdTe

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Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 15; Related Information: CHORUS Timestamp: 2016-12-26 01:57:15; Journal ID: ISSN 0021-8979
American Institute of Physics
Country of Publication:
United States

Citation Formats

Reese, M. O., Perkins, C. L., Burst, J. M., Farrell, S., Barnes, T. M., Johnston, S. W., Kuciauskas, D., Gessert, T. A., and Metzger, W. K. Intrinsic surface passivation of CdTe. United States: N. p., 2015. Web. doi:10.1063/1.4933186.
Reese, M. O., Perkins, C. L., Burst, J. M., Farrell, S., Barnes, T. M., Johnston, S. W., Kuciauskas, D., Gessert, T. A., & Metzger, W. K. Intrinsic surface passivation of CdTe. United States. doi:10.1063/1.4933186.
Reese, M. O., Perkins, C. L., Burst, J. M., Farrell, S., Barnes, T. M., Johnston, S. W., Kuciauskas, D., Gessert, T. A., and Metzger, W. K. 2015. "Intrinsic surface passivation of CdTe". United States. doi:10.1063/1.4933186.
title = {Intrinsic surface passivation of CdTe},
author = {Reese, M. O. and Perkins, C. L. and Burst, J. M. and Farrell, S. and Barnes, T. M. and Johnston, S. W. and Kuciauskas, D. and Gessert, T. A. and Metzger, W. K.},
abstractNote = {},
doi = {10.1063/1.4933186},
journal = {Journal of Applied Physics},
number = 15,
volume = 118,
place = {United States},
year = 2015,
month =

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4933186

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Cited by: 21works
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  • The oxidation of single-crystal p-type CdTe of )111) orientation by thermal, wet chemical, and plasma techniques has been investigated. The C-V measurements of metal-oxide-semiconductor (MOS) structures prepared from various oxides indicate that device quality thermal oxide can be prepared by hydrogen annealing of CdTe prior to oxidation. The thermal oxide consists mainly of TeO/sub 2/. MOS structures prepared from oxidation of the Cd(111) or Te(111) face of CdTe show low oxide fixed charge density (10/sup 11//cm/sup 2/) and low interface state density (10/sup 10//cm/sup 2/ eV). MOS structures prepared from wet chemical oxide and plasma oxide have less desirable properties.
  • Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxidemore » materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.« less
  • The clean CdTe(100) surface prepared by sputtering and annealing was studied with high-energy electron diffraction (HEED) and photoemission. HEED showed the surface to be a one-domain, (2 x 1) reconstruction. Photoemission spectra showed two surface-shifted components for the Cd 4d core level, with an intensity ratio of about 1:3, accounting for nearly an entire atomic layer. No surface-induced shifts for the Te 4d core level were detected. A model is proposed for the surface structure in which the surface layer is free of Te, and Cd atoms form dimers resulting in a (2 x 1) reconstruction; in addition, about (1/4)more » of the surface area is covered by excess loosely attached Cd atoms. Ag was evaporated on the surface at room temperature and found to grow three dimensionally in the (111) direction. The Ag was found to interact only weakly with the substrate, although the Cd atoms originally loosely bound on top of the surface were found to float on the evaporated Ag islands. A small coverage-dependent surface photovoltage, induced by the synchrotron radiation used for photoemission, was observed; with this effect taken into account, band bending was monitored, the final Fermi-level position being near 0.96 eV above the valence-band maximum. This corresponds to a Schottky-barrier height of about 0.60 eV for the n-type sample used in this experiment. The mechanism for generation of the surface photovoltage will be discussed.« less